X-On Electronics has gained recognition as a prominent supplier of NAND512W3A2SNXE NAND Flash across the USA, India, Europe, Australia, and various other global locations. NAND512W3A2SNXE NAND Flash are a product manufactured by Micron. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

NAND512W3A2SNXE Micron

NAND512W3A2SNXE electronic component of Micron
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Part No.NAND512W3A2SNXE
Manufacturer: Micron
Category: NAND Flash
Description: SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 48-Pin TSOP Tray
Datasheet: NAND512W3A2SNXE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 3.605 ea
Line Total: USD 36.05 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 3.605
25 : USD 3.5239
50 : USD 3.4441
100 : USD 3.3343

   
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Supply Current - Max
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Access Time Max
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Programmable
Rad Hardened
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We are delighted to provide the NAND512W3A2SNXE from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NAND512W3A2SNXE and other electronic components in the NAND Flash category and beyond.

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Numonyx NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Hardware program/erase locked during Features power transitions Density Electronic signature 512 Mbit: 4096 blocks Manufacturer ID: NAND Flash interface x8 device: 20h x16 device: 0020h x8 or x16 bus width Device ID: Multiplexed address/data NAND512W3A2S: 76h Memory configuration NAND512W4A2S: 0056h Page size: NAND512R3A2S: 36h x8 device: (512 + 16 spare) Bytes NAND512R4A2S: 0046h x16 device: (256 + 8 spare) Words Package Block size: RoHS compliant x8 device: (16K + 512 spare) Bytes TSOP48 12 x 20 mm x16 device: (8K + 256 spare) Words VFBGA63 9 x 11 mm Supply voltage: 1.8 V, 3 V Read/write performance Random access: 12 s (3 V)/15 s(1.8 V) Table 1. Device summary (max) Root part number list - see Table 25 for details Sequential access: 30 ns (3 V)/50 ns NAND512W3A2S (1.8 V)(min) Page program time: 200 s (typ) NAND512W4A2S Block erase time: 2 ms (typ) NAND512R3A2S Programming performance (typ): NAND512R4A2S x8 device: 2.3 MByte/s x16 device: 2.4 MByte/s Additional features Copy back program mode Error correction code models Bad blocks management and wear leveling algorithms Hardware simulation models Quality and reliability 100,000 program/erase cycles (with ECC) 10 years data retention Operating temperature: 40 to 85 C Security OTP area Serial number (unique ID) October 2012 210403 - Rev 4 1/51 www.numonyx.com 1Contents Numonyx SLC SP 70 nm Contents 1 Description . 6 2 Memory array organization 11 3 Signal descriptions . 13 4 Bus operations 15 4.1 Command input 15 4.2 Address input 15 4.3 Data input . 15 4.4 Data output 15 4.5 Write protect . 16 4.6 Standby 16 5 Command set 18 6 Device operations 19 6.1 Pointer operations 19 6.2 Read memory array . 20 6.2.1 Random read . 20 6.2.2 Page read . 21 6.2.3 Sequential row read 21 6.3 Page program 23 6.4 Copy back program . 24 6.5 Block erase 25 6.6 Reset 25 6.7 Read status register . 26 6.7.1 Write protection bit (SR7) . 26 6.7.2 P/E/R controller bit (SR6) . 26 6.7.3 Error bit (SR0) 26 6.7.4 SR5, SR4, SR3, SR2 and SR1 are reserved . 26 6.8 Read electronic signature . 27 2/51 210403 - Rev 4

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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