4N22 4N23 JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL OPTOCOUPLERS OPTOELECTRONIC PRODUCTS 4N24 DIVISION 01/14/2011 Features: Applications: Qualified to MIL-PRF-19500/486 Collector in electrical contact with case Eliminate ground loops Level shifting Overall current gain: 1.5 typical (4N24) Base lead provided for conventional transistor Line receiver biasing Switching power supplies Rugged package Motor control High gain, high voltage transistor 1 kV electrical isolation DESCRIPTION A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24s can be tested to customer specifications. *ABSOLUTE MAXIMUM RATINGS Input to Output Voltage ....................................................................................................................................................... 1 kV Emitter-Collector Voltage ......................................................................................................................................................... 7 V Collector-Emitter Voltage ....................................................................................................................................................... 40 V Collector-Base Voltage .......................................................................................................................................................... 45 V Reverse Input Voltage ............................................................................................................................................................ 2 V Input Diode Continuous Forward Current at (or below) 25C Free-Air Temperature (Note 1) ........................................... 40mA Peak Forward Input Current (Value applies for tw < 1 s PRR < 300 pps) ............................................................................. 1 A Continuous Collector Current ............................................................................................................................................. 50 mA Continuous Transistor Power Dissipation at (or below) 25C Free-Air Temperature (Note 2) ...................................... 300 mW Storage Temperature .......................................................................................................................................... -65C to +125C Operating Free-Air Temperature Range ............................................................................................................ -55C to +125C Lead Solder Temperature (10 seconds max., 1/16 from case) ........................................................................................ 240C Notes: 1. Derate linearly to 125C free-air temperature at the rate of 0.40 mA/C above 65C. 2. Derate linearly to 125C free-air temperature at the rate of 5 mW/C above 65C. JEDEC registered data Package Dimensions Schematic Diagram 0.185 4.70 0.155 3.94 0.045 1.14 3 C A 5 45 0.029 0.73 0.040 1.02 MAX 0.034 0.86 0.028 0.71 1 2 7 1 E 0.200 5.08 0.335 8.51 0.370 9.40 3 0.305 7.75 0.336 8.53 6 5 6 LEADS 0.019 0.48 2 B K 7 0.016 0.41 0.500 12.70 MIN COLLECTOR IS COMMON TO CASE. ALL LINEAR DIMENSIONS ARE IN INCHES MILLIMETERS . MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES MICROPAC.COM 4N22, 4N23, and 4N24 JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL OPTOCOUPLERS 01/14/2011 *ELECTRICAL CHARACTERISTICS INPUT LED T = 25 C Unless otherwise specified A PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE Input Diode Static Reverse Current I 100 nA V = 2 V R R Input Diode Static Forward Voltage -55 C 1 1.7 +25 C V 0.8 1.5 V I = 10 mA F F +125 C 0.7 1.3 *OUTPUT TRANSISTOR TA = 25 C Unless otherwise specified PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE Collector-Base Breakdown Voltage V 45 V I = 100 A, I = 0, I = 0 (BR)CBO C E F Collector-Emitter Breakdown Voltage V 40 V I = 1 mA, I = 0, I = 0 (BR)CEO C B F Emitter-Base Breakdown Voltage V 7 V I = 0, I = 100 A, I = 0 (BR)EBO B E F *COUPLED CHARACTERISTICS T = 25 C Unless otherwise specified A PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE On State Collector Current 4N22 0.15 4N23 0.2 mA V = 5 V, I = 0, I = 2 mA CE B F I C(ON) 4N24 0.4 On State Collector Current 4N22 2.5 4N23 6 mA V = 5 V, I = 0, I = 10 mA CE B F I C(ON) 4N24 10 On State Collector Current 4N22 1 -55 C 4N23 2.5 mA V = 5 V, I = 0, I = 10 mA CE B F I C(ON) 4N24 4 On State Collector Current 4N22 1 +100 C 4N23 2.5 mA V = 5 V, I = 0, I = 10 mA CE B F I C(ON) 4N24 4 Off State Collector Current +25 C I 100 nA V = 20 V, I = 0, I = 0 mA C(OFF) CE B F Off State Collector Current +100 C I 100 A V = 20 V, I = 0, I = 0 mA C(OFF) CE B F Collector-Emitter Saturation Voltage 4N22 V 0.3 V I = 2.5 mA, I = 0, I = 20 mA CE(SAT) C B F 4N23 V 0.3 V I = 5 mA, I = 0, I = 20 mA CE(SAT) C B F 4N24 V 0.3 V I = 10 mA, I = 0, I = 20 mA CE(SAT) C B F 11 Input to Output Resistance ALL R 10 V = 1 kV 1 I-O IN-OUT Input to Output Capacitance ALL C 5 pF F = 1 MHz, V = 1 kV 1 I-O IN-OUT Rise Time 4N22 15 4N23 t 15 s V = 10 V, I = 10 mA, R = 100 r CC F L 4N24 20 Fall Time 4N22 15 4N23 t 15 s V = 10 V, I = 10 mA, R = 100 f CC F L 4N24 20 NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS Input Current, Low Level I 0 1 A FL Input Current, High Level I 2 10 mA FH Supply Voltage V 5 10 V CC MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES MICROPAC.COM