4N22U 4N23U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS 4N24U DIVISION 05/29/03 Features: Applications: MIL-PRF-19500/486 Qualified Base lead provided for conventional transistor Line Receivers biasing Switchmode Power Supplies High gain, high voltage transistor Signal ground isolation Miniature package saves circuit board area Process Control input/output isolation High voltage electrical isolation1KV rating Motor control DESCRIPTION High gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor in a 6-pin leadless chip carrier. The 4N22U, 4N23U and 4N24U optocouplers can be supplied to customer specifications as well as JAN, JANS, JANTX, and JANTXV quality levels. *ABSOLUTE MAXIMUM RATINGS Input to Output Voltage.................................................................................................................................................... 1000V Collector-Base Voltage...........................................................................................................................................................35V Collector-Emitter Voltage........................................................................................................................................................35V Emitter-Collector Voltage..........................................................................................................................................................4V Input Diode Reverse Voltage....................................................................................................................................................2V Input Diode Continuous Forward Current at (or below) 65C Free-Air Temperature (see note 1) ....................................40mA Continuous Collector Current ..............................................................................................................................................50mA Peak Diode Current ..................................................................................................................................................................1A Continuous Transistor Power Dissipation at (or below) 25C Free-Air Temperature (see Note 2) ................................300mW Operating Free-Air Temperature Range.............................................................................................................-55C to +125C Storage Temperature..........................................................................................................................................-65C to +125C Solder Temperature (10 seconds)...................................................................................................................................... 240C Notes: 1. Derate linearly to 125C free-air temperature at the rate of 0.67 mA/C above 65C. 2. Derate linearly to 125C free-air temperature at the rate of 3 mW/C above 65C. * JEDEC registered data Package Dimensions Schematic Diagram 0.250 6.35 0.080 2.03 A C 0.240 6.10 1 3 0.066 1.68 PIN 1 IDENTIFIER 0.175 4.45 0.165 4.19 E 5 0.028 0.71 0.105 2.67 0.022 0.56 2 0.095 2.41 3 B K 1 4 6 4 5 6 0.055 1.40 0.098 2.49 0.045 1.14 0.082 2.08 0.070 1.78 5 PLS 0.060 1.52 ALL DIMENSIONS ARE IN INCHES MILLIMETERS MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES MICROPAC.COM 4N22U, 4N23U, and 4N24U 6 PIN LCC OPTOCOUPLERS 05/29/03 ELECTRICAL CHARACTERISTICS INPUT LED T = 25 C Unless otherwise specified A PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE Input Diode Static Reverse Current I 100 A V = 2V R R Input Diode Static Forward Voltage -55 C 1.0 1.5 +25 C V 0.8 1.3 V I = 10mA F F +100 C 0.7 1.2 OUTPUT TRANSISTOR T = 25 C Unless otherwise specified A PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE Collector-Base Breakdown Voltage V 35 V I = 100A, I = 0, I = 0 (BR)CBO C B F Collector-Emitter Breakdown Voltage V 35 V I = 1mA, I = 0, I = 0 (BR)CEO C B F Emitter-Base Breakdown Voltage V 4 V I = 0, I = 100A, I = 0 (BR)EBO C E F COUPLED CHARACTERISTICS T = 25 C Unless otherwise specified A PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE On State Collector Current 4N22U 0.15 mA V = 5V, I = 0, I = 2mA CE B F 4N23U I 0.2 C(ON) 4N24U 0.4 On State Collector Current 4N22U 2.5 mA 4N23U I 6.0 V = 5V, I = 0, I = 10mA C(ON) CE B F 4N24U 10.0 On State Collector Current 4N22U 1.0 mA -55 C 4N23U I 2.5 V = 5V, I = 0, I = 10mA C(ON) CE B F 4N24U 4.0 On State Collector Current 4N22U 1.0 mA +100 C 4N23U I 2.5 V = 5V, I = 0, I = 10mA C(ON) CE B F 4N24U 4.0 Off State Collector Current +25 C I 100 nA V = 20V, I = 0, I = 0mA C(OFF) CE B F Off State Collector Current +100 C I 100 A V = 20V, I = 0, I = 0mA C(OFF) CE B F Collector-Emitter Saturation Voltage 4N22U V 0.3 V I = 2.5mA, I = 0, I = 20mA CE(SAT) C B F 4N23U V 0.3 V I = 5mA, I = 0, I = 20mA CE(SAT) C B F 4N24U V 0.3 V I = 10mA, I = 0, I = 20mA CE(SAT) C B F 11 Input to Output Resistance ALL R 10 V = 1kV 1 I -O IN-OUT Input to Output Capacitance ALL C 5 pF f = 1MHz, V = 1kV 1 I-O IN-OUT Rise Time 4N22U t 15 s r 4N23U t 15 s V = 10V, I = 10mA, R = 100 r CC F L 4N24U t 20 s r Fall Time 4N22U t 15 s f 4N23U t 15 s V = 10V, I = 10mA, R = 100 f CC F L 4N24U t 20 s f NOTE: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. SELECTION GUIDE PART NUMBER PART DESCRIPTION 4N22U Commercial 4N23U Commercial 4N24U Commercial JAN4N22U JAN Screened JAN4N23U JAN Screened JAN4N24U JAN Screened JANTX4N22U JANTX Screened JANTX4N23U JANTX Screened JANTX4N24U JANTX Screened JANTXV4N22U JANTXV Screened JANTXV4N23 JANTXV Screened JANTXV4N24U JANTXV Screened JANS4N22U JANS Screened JANS4N23U JANS Screened JANS4N24U JANS Screened MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES MICROPAC.COM