X-On Electronics has gained recognition as a prominent supplier of ERA-1SM+ RF Amplifier across the USA, India, Europe, Australia, and various other global locations. ERA-1SM+ RF Amplifier are a product manufactured by Mini-Circuits. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

ERA-1SM+ Mini-Circuits

ERA-1SM+ electronic component of Mini-Circuits
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See Product Specifications
Part No.ERA-1SM+
Manufacturer: Mini-Circuits
Category: RF Amplifier
Description: RF Amplifier ML AMPL SURF MT RoHS
Datasheet: ERA-1SM+ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.69 ea
Line Total: USD 2.69 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 19 Dec to Tue. 24 Dec
MOQ : 1
Multiples : 1
1 : USD 2.69
10 : USD 2.6272
30 : USD 2.5855
100 : USD 2.5436

0
Ship by Tue. 10 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 7.9742
10 : USD 2.8479
100 : USD 2.3405
250 : USD 2.1126
500 : USD 1.8952
1000 : USD 1.5845
2000 : USD 1.512
5000 : USD 1.4499
10000 : USD 1.4084

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ERA-1SM+ from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ERA-1SM+ and other electronic components in the RF Amplifier category and beyond.

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Surface Mount Monolithic Ampliefi r DC-8 GHz Product Features DC-8 GHz Single Voltage Supply Internally Matched to 50 Ohms Unconditionally Stable Generic photo used for illustration purposes only Low Performance Variation Over Temperature Transient Protected ERA-1SM+ Aqueous washable CASE STYLE: Protected By US Patent 6,943,629 Typical Applications +RoHS Compliant Cellular/ PCS/ 3G Base Station The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications CATV, Cable Modem & DBS Fixed Wireless & WLAN Microwave Radio & Test Equipment General Description ERA-1SM+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable per - formance from lot to lot. It is enclosed in a Micro-X package. ERA-1SM+ uses Darlington configuration and is fabricated using InGaP HBT technology. Expected MTTF is 5,800 years at 85C case temperature. simplified schematic and pin description RF-OUT and DC-IN RF-OUT and DC-IN 3 RF IN 4 GND GND 2 1 RF IN GROUND Function Pin Number Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen RF IN 1 for the frequency of operation. RF output and bias pin. DC voltage is present on this pin therefore a DC blocking capacitor is necessary for proper operation. An RF choke is needed to feed DC bias RF-OUT and DC-IN 3 without loss of RF signal due to the bias connection, as shown in Recommended Application Circuit. Connections to ground. Use via holes as shown in Suggested Layout for PCB GND 2,4 Design to reduce ground path inductance for best performance. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp REV. N ECO-009719 ERA-1SM+ Mini-Circuits 210915 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 1 of 4Monolithic InGaP HBT MMIC Amplifier ERA-1SM+ Electrical Specifications at 25C and 40mA, unless noted Parameter Min. Typ. Max. Units Cpk Frequency Range* DC 8 GHz Gain f=0.1 GHz 11.4 12.3 12.9 dB 1.5 f=1 GHz 12.1 f=2 GHz 10.3 11.8 12.9 f=3 GHz 10.9 f=4 GHz 9.7 f=6 GHz 7.9 f=8 GHz 8.2 Magnitude of Gain Variation versus Temperature f=0.1 GHz .0012 .0025 dB/C (values are negative) f=1 GHz .0015 .003 f=2 GHz .0017 .0035 f=3 GHz .002 .004 f=4 GHz .002 .004 f=6 GHz .0022 .005 f=8 GHz .0019 .005 Input Return Loss f=0.1 GHz 30 dB f=2 GHz 25 f=3 GHz 23 f=4 GHz 23 f=6 GHz 18 f=8 GHz 16 Output Return Loss f=0.1 GHz 26 dB f=2 GHz 21 f=3 GHz 16 f=4 GHz 15 f=6 GHz 15 f=8 GHz 15 Reverse Isolation f=2 GHz 14 17 dB Output Power 1 dB compression f=0.1 GHz 12 dBm 1.33 f=1 GHz 12 f=2 GHz 10 12 f=3 GHz 12 f=4 GHz 12 f=6 GHz 10.5 f=8 GHz 8 Saturated Output Power f=0.1 GHz 13 dBm (at 3dB compression) f=2 GHz 13 f=4 GHz 12.5 f=6 GHz 11 f=8 GHz 10 f=0.1 GHz 24 28 dBm 1.33 Output IP3 f=1 GHz 24 28 f=2 GHz 23 28 f=4 GHz 20 25 f=0.1 GHz 4.3 5 dB 1.33 Noise Figure f=2 GHz 4.3 5.3 f=4 GHz 4.5 5.5 f=6 GHz 4.9 f=8 GHz 5.5 Group Delay f=2 GHz 70 psec Recommended Device Operating Current 40 mA Device Operating Voltage 3.2 3.4 3.6 V 1.5 Device Voltage Variation vs. Temperature at 40mA -2.0 mV/C Device Voltage Variation vs. Current at 25C 9.4 mV/mA 1 Thermal Resistance, junction-to-case 183 C/W *Guaranteed specification DC-8 GHz. Low frequency cut off determined by external coupling capacitors. Absolute Maximum Ratings Parameter Ratings Operating Temperature* -45C to 85C Storage Temperature -65C to 150C Note: Permanent damage may occur if any of these limits are exceeded. Operating Current 75mA These ratings are not intended for continuous normal operation. Power Dissipation 330mW 1 Case is defined as ground leads. Input Power 15dBm *Based on typical case temperature rise 5C above ambient. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 2 of 4

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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