5 VOLT-SURFACE MOUNT Monolithic Amplifier GVA-81+ 50 DC to 6 GHz THE BIG DEAL y Gain, 10 dB typ. y High Pout, P1dB 19.5 dBm typ. y High IP3, 41 dBm typ. at 1 GHz y Ruggedized design y Fixed 5V operation y Unconditionally stable Generic photo used for illustration purposes only y Excellent ESD Protection CASE STYLE: DF782 y Transient protected, US patent 6,943,629 y Low additive phase noise, typically -171 dBc/Hz 10 KHz +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications APPLICATIONS LTE Performance y Base station infrastructure y Portable Wireless y CATV & DBS y MMDS & Wireless LAN y LTE y Suitable for low phase noise applications PRODUCT OVERVIEW GVA-81+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot and is enclosed in a SOT-89 package. It uses patented Transient Protected Darlington configuration and is fabricated using InGaP HBT technology. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF IN 3 RF-OUT & DC-IN 4 2 GROUND 1 RF-IN GROUND Pin Function Description Number RF IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF-OUT RF output and bias pin. DC voltage is present on this pin therefore a DC blocking capacitor is necessary for proper operation. An RF choke 3 and DC-IN is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in Recommended Application Circuit, Fig. 2 Connections to ground. Use via holes as shown in Suggested Layout for PCB Design to reduce ground path inductance for best GND 2,4 performance. A. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses. B. The RFMD SBB4089Z part number is used for identification and comparison purposes only. REV. C ECO-010563 GVA-81+ 211108 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com PAGE 1 OF 15 VOLT-SURFACE MOUNT Monolithic Amplifier GVA-81+ (1) ELECTRICAL SPECIFICATIONS AT 25C AND 5V, UNLESS NOTED Parameter Condition (GHz) Min. Typ. Max. Units 2 Frequency Range DC 6 GHz 0.1 9.5 10.5 11.5 1.0 10.5 2.0 9.0 10.0 11.0 Gain dB 3.0 9.3 4.0 8.0 8.7 10.0 6.0 8.1 0.1 0.0005 1.0 0.0010 (3) 2.0 0.0016 0.005 InpMagnitude of Gain Variation versus Temperature dB/C (values are negative) 3.0 0.0020 4.0 0.0025 6.0 0.0036 0.1 38.0 1.0 27.0 2.0 17 20.1 Input Return Loss dB 3.0 17.4 4.0 16.9 6.0 18.5 Reverse Isolation 2.0 20.8 dB 0.1 18.0 19.1 1.0 18.0 19.1 2.0 18.0 19.7 Output Power at 1dB Compression dBm 3.0 20.0 4.0 19.4 6.0 17.7 0.1 42.0 1.0 41.3 2.0 34 36.6 Output IP3 dBm 3.0 35.0 4.0 33.2 6.0 31.1 0.1 7.3 7.9 1.0 7.3 2.0 7.4 7.9 Noise Figure dB 3.0 7.6 4.0 7.7 8.2 6.0 8.3 Additive Phase Noise 2 GHz, 10 KHz offset -171 dBc/Hz Group Delay 4.8 98 psec Device Operating Voltage 94 5.0 5.2 V Device Operating Current 103 112 mA Device Current Variation vs. Temperature 62 A/C Device Current Variation vs Voltage 0.036 mA/mV Thermal Resistance, junction-to-ground lead 68 C/W (1) Measured on Mini-Circuits test board TB-313. See Characterization Test Circuit (Fig. 1) (2) Guaranteed specification DC*-7 GHz. *Low frequency cut off determined by external coupling capacitors and RF Choke (RFC). (3) (Gain at 85C, Gain at -45C)/130 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com PAGE 2 OF 3