Low Noise, High IP3 Monolithic Ampliefi r PMA-545+ 50 0.05 to 6 GHz The Big Deal 3mm x 3mm MCLP EIA: QFN) Pkg Ultra Low Noise Figure, 0.8 dB Ultra High IP3 Up to 6 GHz LTE Performance Summary Performance at 1 GHz Product Overview Operating Frequency: 0.05 to 6.0 GHz Mini-Circuits PMA-545+ is a E-PHEMT based Ultra-Low Noise Figure 0.8 dB, typ. Noise MMIC Amplifier operating from 50 MHz to 6 GHz with a unique combination of low noise and high IP3 making this Gain 20 dB, typ. amplifier ideal for sensitive receiver applications. This design IP3 +36 dBm, typ. operates on a single 3V supply and is internally matched to P (at 1dB) +20 dBm, typ. OUT 50 Ohms. DC Current (at 3V) 80 mA, typ. Key Features Feature Advantages Industry Leading Noise Figure, measured in a 50 Ohm environment without any Ultra Low Noise: 0.8 dB NF at 1GHz external matching Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noise High IP3: +36 dBm IP3 at 1GHz Receiver Front End (RFE) because it gives the user advantages at both ends of the dynamic range: sensitivity & two-tone IM dynamic range The PMA-545+ maintains consistent output power capability over the full operating Output Power: +20 dBm at 1GHz temperature range making it ideal to be used in remote applications such as LNBs as the L Band driver stage Broadband covering primary wireless communications bands: Cellular, PCS, LTE, Broad Band: 0.05 to 6.0GHz WiMAX No external matching elements required to achieve the advertized noise and output Internally Matched power over the full band MCLP Package Low Inductance, repeatable transitions, excellent thermal pad Ruggedized design operates up to input powers often seen at Receiver inputs. Can Max Input Power +20 dBm operate up to + 20dBm without the need of an external limiter Low, small signal operating current of 80 mA nominal maintains junction tempera- High Reliability tures typically below 130C at 85C ground lead temperature Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 1 of 2Low Noise, High IP3 0.05-6 GHz Monolithic Ampliefi r Product Features Single Positive Supply Voltage, 3V Ultra Low Noise Figure, 0.8 dB typ. at 1GHz High IP3, 36 dBm typ. 1GHz Gain, 20dB typ. at 1 GHz Output Power, up to +20dBm typ. Micro-miniature size - 3mm x 3mm PMA-545+ A queous washable CASE STYLE: DQ849 Typical Applications Cellular +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site ISM for RoHS Compliance methodologies and qualifications GSM WCDMA LTE WiMAX LTE Performance WLAN UNII and HIPERLAN General Description PMA-545+ is a high dynamic range, low noise, high IP3, high output power, monolithic amplifier. Manu - factured using E-PHEMT* technology enables it to work with a single positive supply voltage. Uncondi- tionally stable over the operating frequency. simplified schematic and pad description BIAS (7) NC (8) BIAS RF-IN (1) RF-OUT & DC (6) GND RF-IN RF-OUT and DC NC (2) NC (5) NC (3) NC (4) Pad Function Description (See Application Circuit, Fig. 2) Number RF-IN 1 RF input pad RF output pad (connected to RF-OUT via blocking external cap C2, and Supply RF-OUT & DC 6 voltage Vs via RF Choke L1) BIAS 7 Bias pad (connected to Vs via Rbias) GND paddle in center of bottom Connected to ground NOT USED 2,3,4,5,8 No internal connection recommended use: per PCB Layout PL-299 *Enhancement mode Pseudomorphic High Electron Mobility Transistor. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. REV. D C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled M151107 to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp PMA-545+ ED-13485 Mini-Circuits TH/RS/CP/AM 150924 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 2 of 2