Low Noise, High IP3 Monolithic Ampliefi r PMA-545G1+ 50 0.4 to 2.2 GHz The Big Deal 3mm x 3mm MCLP Pkg High Gain, 31.5 dB Low Noise Figure, 1.0 dB LTE Performance High IP3, 32-35 dBm Product Overview Mini-Circuits PMA-545G1+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 0.4 to 2.2 GHz with a unique combination of low noise and high IP3 making this amplifier ideal for sensitive receiver ap - plications. This design operates on a single +5V supply and is internally matched to 50 Ohms. Key Features Feature Advantages Incorporating multiple stages of amplification, the PMA-545G1+ provides high High Gain 26-33 dB gain reducing cost and PCB board space. Excellent Noise Figure, measured in a 50 Ohm environment without any ex- Ultra Low Noise: 0.9 dB NF at 0.9 GHz ternal matching. When combined with high gain of this design, it suppresses second stage NF contribution. Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low High IP3: +34 dBm IP3 at 0.9 GHz Noise Receiver Front End (RFE) giving the user advantages at both ends of the dynamic range: sensitivity & two-tone IM dynamic range The PMA-545G1+ maintains consistent output power capability over the full Output Power: +22 dBm at 0.9 GHz operating temperature range making it ideal to be used in remote applications such as LNBs as the L Band driver stage No external matching elements required to achieve the advertized noise and Internally Matched output power over the full band MCLP Package Low Inductance, repeatable transitions, excellent thermal pad Ruggedized design operates up to input powers often seen at Receiver Max Input Power +25 dBm inputs. Low, small signal operating current of 160 mA nominal maintains junction High Reliability temperatures typically below 130C at 85C ground lead temperature Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 1 of 5Low Noise, High IP3 Monolithic Ampliefi r 0.4 - 2.2 GHz Product Features High Gain, 31.5 dB typ. at 0.9 GHz Ultra Low Noise Figure, 0.9 dB typ. at 0.9 GHz High IP3, 34 dBm typ. 0.9 GHz Output Power, up to +22dBm typ. at 0.9 GHz Single Positive Supply Voltage, 5V PMA-545G1+ Micro-miniature size - 3mm x 3mm CASE STYLE: DQ849 Aqueous washable Protected by U.S. patent no. 8,803,612 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Typical Applications Cellular ISM GSM LTE Performance WCDMA LTE GPS General Description PMA-545G1+ is a high dynamic range, low noise, high IP3, high output power, monolithic amplifier. Manu - factured using E-PHEMT* technology enables it to work with a single positive supply voltage. Uncondition- ally stable over the operating frequency. BIAS (7) simplified schematic and pad description NC (8) BIAS N/C (1) NC (6) GND RF-OUT & DC (5) RF IN (2) RF-IN RF-OUT and DC NC (3) BIAS (4) Pad Function Description (See Application Circuit, Fig. 2) Number RF-IN 2 RF input pad (connected to RF-IN via C1) RF output pad (connected to RF-OUT via blocking external cap C2, and Supply RF-OUT & DC 5 voltage Vs via RF Choke L2) Bias pad 4 connects to Vs via L1 & pad 7 connects to Vs BIAS 4 & 7 GND paddle in center of bottom Connected to ground NOT USED 1,3,6,8 No internal connection recommended use: per PCB Layout PL-346 *Enhancement mode Pseudomorphic High Electron Mobility Transistor. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled REV. A to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp M151107 PMA-545G1+ TH/RS/CP/AM Mini-Circuits 200303 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 2 of 5