ULTRA LOW NOISE, MEDIUM CURRENT D-PHEMT Transistor SAV-331+ 50 10-4000 MHz THE BIG DEAL y Low Noise Figure, 0.5 dB typ. at 300 MHz y Gain, 24.1 dB typ. at 300 MHz y High Output IP3, +32.3 dBm typ. at 300 MHz y Output Power at 1dB comp., +19.6 dBm typ. at 300 MHz Generic photo used for illustration purposes only y Low Current, 60mA CASE STYLE: MMM1362 y External biasing and matching required +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications APPLICATIONS y Cellular y ISM y GSM y WCDMA y WiMax y WLAN y UNII and HIPERLAN PRODUCT OVERVIEW Mini-Circuits SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications systems. Manufactured using highly repeatable D-PHEMT* technology, the unit comes housed in a tiny 4-lead SOT-343 package. This model requires external biasing and matching. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION DRAIN DRAIN 1 4 SOURCE GATE SOURCE 2 3 GATE SOURCE SOT-343 (SC-70) PACKAGE Function Pin Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF Input Drain 1 Drain used for RF output * Depletion mode Pseudomorphic High Electron Mobility Transistor. REV. B ECO-010314 SAV-331+ RS/CP/AM 211022 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com PAGE 1 OF 4ULTRA LOW NOISE, MEDIUM CURRENT D-PHEMT Transistor SAV-331+ ELECTRICAL SPECIFICATIONS AT T =25C, FREQUENCY 10 TO 4000 MHZ AMB Symbol Parameter Condition Min. Typ. Max. Units DC Specifications V Operational Gate Voltage V =4V, I =60 mA -0.96 -0.69 -0.51 V GS DS DS V Pinch-off Voltage V =1.5 V, I = 10% of Idss -0.81 V p DS DS I Saturated Drain Current V S=4V, V =0 V 228 A DSS D GS G Transconductance V =4V, Gm= I /V 282 mS M DS DS P I Gate to Drain Leakage Current V =5V 1000 uA GDO GD I Gate leakage Current V =V =-4V 600 A GSS GD GS Specifications, Z0=50 Ohms (Figure 1) * f=40 MHz 0.9 f=300 MHz 0.5 NF Noise Figure V =4V, I =60 mA dB f=900 MHz 0.4 DS DS f=2000 MHz 0.5 0.8 f=4000 MHz 0.9 24.6 f=40 MHz 24.1 f=300 MHz Gain Gain V =4V, I =60 mA 21.3 dB f=900 MHz DS DS 13.9 16.6 18.3 f=2000 MHz 11.5 f=4000 MHz 30.9 f=40 MHz 32.3 f=300 MHz OIP3 Output IP3 V =4V, I =60 mA 33.5 dBm f=900 MHz DS DS 35.5 f=2000 MHz 38.7 f=4000 MHz 19.1 f=40 MHz 19.6 f=300 MHz Power output at 1 dB P1dB V =4V, I =60 mA 18.0 20.2 dBm f=900 MHz DS DS Compression 18.9 21.1 f=2000 MHz 21.8 f=4000 MHz Thermal Resistance 109 C/W JC * Tested on Mini-Circuits TB-471+ test board (1) MAXIMUM RATINGS Symbol Parameter Max. Units 2 V Drain-Source Voltage 5 V DS 2 V Gate-Source Voltage -5 V GS 2 V Gate-Drain Voltage -5 V GD 2 I Drain Current 149 mA DS P Total Dissipated Power 400 mW DISS P RF Input Power 20 dBm IN T Channel Temperature 150 C CH T Operating Temperature -40 to 85 C OP T Storage Temperature -65 to 150 C STD (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Assumes DC quiescent conditions, Vgs = -0.51 V, Vds = 4 V. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com PAGE 2 OF 4