X-On Electronics has gained recognition as a prominent supplier of SAV-551+ RF Amplifier across the USA, India, Europe, Australia, and various other global locations. SAV-551+ RF Amplifier are a product manufactured by Mini-Circuits. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

SAV-551+ Mini-Circuits

SAV-551+ electronic component of Mini-Circuits
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See Product Specifications
Part No.SAV-551+
Manufacturer: Mini-Circuits
Category: RF Amplifier
Description: RF Amplifier LOW NOISE AMPL SM RoHS
Datasheet: SAV-551+ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.1528 ea
Line Total: USD 2.15 
Availability - 7
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 2.1528
10 : USD 2.103
30 : USD 2.0686
100 : USD 2.0362

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SAV-551+ from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SAV-551+ and other electronic components in the RF Amplifier category and beyond.

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ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ 0.045-6GHz THE BIG DEAL y Low Noise Figure, 0.5 dB y Gain, 16 dB at 2 GHz y High Output IP3, +25 dBm y Output Power at 1dB comp., +18 dBm y Low Current, 15mA Generic photo used for illustration purposes only y Wide bandwidth y External biasing and matching required CASE STYLE: MMM1362 a,b y May be used as replacement for Avago ATF-55143 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications APPLICATIONS y Cellular y ISM y GSM y WCDMA y WiMax y WLAN y UNII and HIPERLAN PRODUCT OVERVIEW SAV-551+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a complete module, 50 in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION DRAIN DRAIN 1 4 SOURCE GATE SOURCE 2 3 GATE SOURCE SOT-343 (SC-70) PACKAGE Function Pin Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF Input Drain 1 Drain used for RF output * Enhancement mode Pseudomorphic High Electron Mobility Transistor. a. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses. b. The Avago ATF-54143 part number is used for identification and comparison purposes only REV. F ECO-010314 SAV-551+ 211025 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com PAGE 1 OF 13ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ ELECTRICAL SPECIFICATIONS AT T =25C, FREQUENCY 0.045 TO 6 GHz AMB Symbol Parameter Condition Min. Typ. Max. Units DC Specifications V Operational Gate Voltage V =3V, I =15 mA 0.22 0.34 0.46 V GS DS DS V Threshold Voltage V =3V, I =4 mA 0.18 0.26 0.38 V TH DS DS I Saturated Drain Current V =3V, V =0 V 1.0 5.0 A DSS DS GS V =3V, Gm= I /V DS DS GS V =V -V GS GS1 GS2 G Transconductance 215 251 285 mS M V =V at I =15 mA GS1 GS DS V =V +0.05V GS2 GS1 I Gate leakage Current V =V =-3V 95 A GSS GD GS RF Specifications, Z0=50 Ohms (Figure 1) V =3V, I =15 mA f=0.9 GHz 0.5 DS DS f=2.0 GHz 0.6 0.9 (1) Noise Figure dB NF f=3.9 GHz 1.0 f=5.8 GHz 1.8 V =4V, I =15 mA f=2.0 GHz 0.6 DS DS V =3V, I =15 mA f=0.9 GHz 20.9 DS DS f=2.0 GHz 14.4 15.9 17.5 Gain Gain f=3.9 GHz 11.2 dB f=5.8 GHz 7.6 V =4V, I =15 mA f=2.0 GHz 16.0 DS DS V =3V, I =15 mA f=0.9 GHz 22.4 DS DS f=2.0 GHz 20.0 24.3 OIP3 Output IP3 f=3.9 GHz 26.9 dBm f=5.8 GHz 28.5 V =4V, I =15 mA f=2.0 GHz 24.4 DS DS V =3V, I =15 mA f=0.9 GHz 17.2 DS DS f=2.0 GHz 16.0 17.5 Power output at 1 dB (2) f=3.9 GHz 18.5 dBm P1dB Compression f=5.8 GHz 17.5 V =4V, I =15 mA f=2.0 GHz 20.0 DS DS (3) MAXIMUM RATINGS (1) Includes test board loss (tested on Mini-Circuits TB-471+ test board) Symbol Parameter Max. Units (2) Drain current was allowed to increase during compression measurements. (3) Operation of this device above any one of these parameters may cause permanent damage. (4) VDS Drain-Source Voltage 5 V (4) Assumes DC quiescent conditions. (4) (5) IGS is limited to 2 mA during test. V Gate-Source Voltage -5 to 0.7 V GS (4) V Gate-Drain Voltage -5 to 0.7 V GD (4) IDS Drain Current 100 mA IGS Gate Current 2 mA P Total Dissipated Power 360 mW DISS (5) P RF Input Power 17 dBm IN TCH Channel Temperature 150 C T Operating Temperature -40 to 85 C OP T Storage Temperature -65 to 150 C STD Thermal Resistance 160 C/W JC www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com PAGE 2 OF 13

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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