Ultra Low Noise, High Current 0.45-6GHz E-PHEMT Product Features Low Noise Figure, 0.5 dB Gain, 17 dB at 2 GHz High Output IP3, +33 dBm Output Power at 1dB comp., +19 dBm Generic photo used for illustration purposes only High Current, 60mA Wide bandwidth TAV-541+ External biasing and matching required CASE STYLE: FG873 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site Typical Applications for RoHS Compliance methodologies and qualifications Cellular ISM GSM WCDMA WiMax WLAN UNII and HIPERLAN General Description TAV-541+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly be- low 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a com - plete module, 50 in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. simplified schematic and pin description DRAIN GATE GATE SOURCE SOURCE SOURCE DRAIN Function Pad Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF input Drain 1 Drain used for RF output * Enhancement mode Pseudomorphic High Electron Mobility Transistor. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled REV. C to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp M151107 ED-13285 Mini-Circuits TAV-541+ 201016 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 1 of 13E-PHEMT TAV-541+ Electrical Specifications at T =25C, Frequency 0.45 to 6 GHz AMB Symbol Parameter Condition Min. Typ. Max. Units DC Specifications V Operational Gate Voltage V =3V, I =60 mA 0.37 0.48 V 0.69 GS DS DS V Threshold Voltage V =3V, I =4 mA 0.18 0.26 0.38 V TH DS DS I Saturated Drain Current V =3V, V =0 V 1.0 5.0 A DSS DS GS V =3V, Gm= I / V DS DS GS V =V -V GS GS1 GS2 G Transconductance 230 392 560 mS M V =V at I =60 mA GS1 GS DS V =V +0.05V GS2 GS1 I Gate leakage Current V =V =-3V 200 A GSS GD GS RF Specifications, Z =50 Ohms (Figure 1) 0 (1) V =3V, I =60 mA Noise Figure f=0.9 GHz 0.4 NF DS DS f=2.0 GHz 0.5 0.9 f=3.9 GHz 1.0 dB f=5.8 GHz 1.8 V =4V, I =60 mA f=2.0 GHz 0.4 DS DS V =3V, I =60 mA f=0.9 GHz 23.8 DS DS f=2.0 GHz 15.5 17.9 18.9 f=3.9 GHz 12.7 Gain Gain dB f=5.8 GHz 9.5 V =4V, I =60 mA f=2.0 GHz 18.0 DS DS V =3V, I =60 mA f=0.9 GHz 32.1 DS DS f=2.0 GHz 30.0 33.6 f=3.9 GHz 34.2 OIP3 Output IP3 dBm f=5.8 GHz 32.9 V =4V, I =60 mA f=2.0 GHz 35.9 DS DS V =3V, I =60 mA f=0.9 GHz 18.9 DS DS f=2.0 GHz 19.1 Power output at 1 dB (2) f=3.9 GHz 19.4 dBm P1dB Compression f=5.8 GHz 19.6 V =4V, I =60 mA f=2.0 GHz 21.1 DS DS (3) Absolute Maximum Ratings Symbol Parameter Max. Units (4) VDS Drain-Source Voltage 5 V (4) VGS Gate-Source Voltage -5 to 0.7 V (4) VGD Gate-Drain Voltage -5 to 0.7 V (4) IDS Drain Current 120 mA IGS Gate Current 2 mA PDISS Total Dissipated Power 550 mW (5) PIN RF Input Power 17 dBm TCH Channel Temperature 150 C TOP Operating Temperature -40 to 85 C TSTD Storage Temperature -65 to 150 C JC Thermal Resistance 112 C/W Notes: (1) Includes test board loss (measured in test board TB-154). (2) Drain current bias allowed to increase during compression measurement. (3) Operation of this device above any one of these parameters may cause permanent damage. (4) Assumes DC quiescent conditions. (5) I is limited to 2 mA during test. GS Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 2 of 13