QED222 Misc

QED222, QED223 Plastic Infrared Light Emitting Diode July 2012 QED222, QED223 Plastic Infrared Light Emitting Diode Features Description PACKAGE DIMENSIONS = 880nm The QED222 and QED223 are 880nm AlGaAs LEDs encapsulated in a clear purple tinted, plastic T-1 3/4 Chip material = AlGaAs package. Package type: T-1 3/4 (5mm lens diameter) Matched photosensor: QSD123/QSD124 Medium wide emission angle, 30 High output power Package material and color: clear, purple tinted, plastic Package Dimensions 0.195 (4.95) REFERENCE 0.305 (7.75) SURFACE 0.040 (1.02) NOM 0.800 (20.3) MIN CATHODE Schematic 0.050 0.100 (2.54) (1.25) NOM ANODE 0.240 (6.10) CATHODE 0.215 (5.45) 0.020 (0.51) SQ. (2X) Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is 0.010 (0.25) on all non-nominal dimensions unless otherwise specified. 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com QED222, QED223 Rev. 1.0.2QED222, QED223 Plastic Infrared Light Emitting Diode Absolute Maximum Ratings (T = 25C unless otherwise specified) A Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Rating Units T Operating Temperature -40 to +100 C OPR T Storage Temperature -40 to +100 C STG (2)(3)(4) T Soldering Temperature (Iron) 240 for 5 sec C SOL-I (2)(3) Soldering Temperature (Flow) 260 for 10 sec C T SOL-F I Continuous Forward Current 100 mA F V Reverse Voltage 5 V R (1) Power Dissipation 200 mW P D (5) I Peak Forward Current 1.5 A F(Peak) Notes: 1. Derate power dissipation linearly 2.67mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16 (1.6mm) minimum from housing. 5. Pulse conditions tp = 100s, T = 10ms. Electrical / Optical Characteristics (T = 25C) A Symbol Parameter Test Conditions Min. Typ. Max. Units Peak Emission Wavelength I = 20mA 890nm PE F Temperature Coefcient 0.2 nm / C TC 1 2 /2 Emission Angle I = 100mA 30 F V Forward Voltage I = 100mA, tp = 20ms 1.7 V F F Temperature Coefcient -6 mV / C TC VF I Reverse Current V = 5V 10 A R R I Radiant Intensity QED222 I = 100mA, tp = 20ms 16 32 mW/sr E F Radiant Intensity QED223 25 TC Temperature Coefcient -0.3 % / C IE t Rise Time I = 100mA 900 ns r F Fall Time 800 ns t f C Junction Capacitance V = 0V 11 pF j R 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com QED222, QED223 Rev. 1.0.2 2