CM300DY-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD NF-Series Module 300 Amperes/600 Volts T MEASURED POINT C (BASEPLATE) A F F E E G2 G E2 B N J H C2E1 E2 C1 E1 G1 G Description: Powerex IGBTMOD Modules K K K are designed for use in switching M NUTS L D (3 PLACES) (2 PLACES) applications. Each module consists of two IGBT Transistors in a half- T THICK PP P bridge configuration with each tran- U WIDTH Q Q sistor having a reverse-connected super-fast recovery free-wheel S diode. All components and inter- C V connects are isolated from the LABEL R heat sinking baseplate, offering simplified system assembly and thermal management. G2 Features: E2 Low Drive Power Low V CE(sat) C2E1 E2 C1 Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy E1 Heat Sinking G1 Applications: AC Motor Control Outline Drawing and Circuit Diagram UPS Battery Powered Supplies Dimensions Inches Millimeters Dimensions Inches Millimeters A 3.70 94.0 L 0.26 Dia. Dia. 6.5 Ordering Information: M M5 Metric M5 B 1.89 48.0 Example: Select the complete N 0.79 20.0 C 1.14+0.04/-0.02 29.0+1.0/-0.5 part module number you desire from the table below -i.e. D 3.150.01 80.00.25 P 0.63 16.0 CM300DY-12NF is a 600V (V ), CES Q 0.28 7.0 E 0.67 17.0 300 Ampere Dual IGBTMOD R 0.83 21.2 F 0.91 23.0 Power Module. G 0.16 4.0 S 0.30 7.5 Type Current Rating V CES T 0.02 0.5 H 0.71 18.0 Amperes Volts (x 50) U 0.110 2.8 J 0.51 13.0 CM 300 12 K 0.47 12.0 V 0.16 4.0 1Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-12NF Dual IGBTMOD NF-Series Module 300 Amperes/600 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM300DY-12NF Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E Short) V 600 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES Collector Current*** (DC, T = 89C) I 300 Amperes C C Peak Collector Current I 600* Amperes CM Emitter Current** (T = 25C) I 300 Amperes C E Peak Emitter Current** I 600* Amperes EM Maximum Collector Dissipation (T = 25C, T 150C) P 780 Watts C j C Mounting Torque M5, Main Terminal 30 in-lb Mounting Torque M6, Mounting 40 in-lb Weight 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts ISO Static Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 30mA, V = 10V 5.0 6.0 7.5 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 300A, V = 15V, T = 25C 1.7 2.2 Volts CE(sat) C GE j I = 300A, V = 15V, T = 125C 1.7 Volts C GE j Total Gate Charge Q V = 300V, I = 300A, V = 15V 1200 nC G CC C GE Emitter-Collector Voltage** V I = 300A, V = 0V 2.6 Volts EC E GE Dynamic Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 45 nf ies Output Capacitance C V = 10V, V = 0V 5.5 nf oes CE GE Reverse Transfer Capacitance C 1.8 nf res Inductive Turn-on Delay Time t 120 ns d(on) Load Rise Time t V = 300V, I = 300A, 120 ns r CC C Switch Turn-off Delay Time t V = V = 15V, R = 2.1, 350 ns d(off) GE1 GE2 G Time Fall Time t Inductive Load 300 ns f Diode Reverse Recovery Time** t Switching Operation, 150 ns rr Diode Reverse Recovery Charge** Q I = 300A 5.5 C rr E *Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi) *** Tc measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips 2