X-On Electronics has gained recognition as a prominent supplier of ME20P06-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. ME20P06-G MOSFETs are a product manufactured by MQTSUKI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ME20P06-G MQTSUKI

Name: ME20P06-G
Brand: MQTSUKI
SKU: ME20P06G_MQTSUKI
Availability: InStock
Rating: 5 (11 reviews)

ME20P06-G electronic component of MQTSUKI

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See Product Specifications

Part No.	ME20P06-G
Manufacturer:	MQTSUKI
Category:	MOSFETs
Description:	MOSFET P Trench 60V 17.7A (Tc) 3V @ 250uA 78 mÎ© @ 20A,10V TO-252-2 (DPAK) RoHS
Datasheet:	ME20P06-G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.2148 ea
Line Total: USD 1.07

Availability - 17
Ship by Thu. 28 Nov to Tue. 03 Dec

MOQ: 5 Multiples: 5
Pack Size: 5

ME20P06-G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

17

Ship by Thu. 28 Nov to Tue. 03 Dec

MOQ : 5
Multiples : 5

5 : USD 0.2148
50 : USD 0.1707
150 : USD 0.1519
500 : USD 0.1283
2500 : USD 0.1177
5000 : USD 0.1114

Specifications

Manufacturer
MQTSUKI MQTSUKI

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TO - 252 - 2 (DPAK) TO - 252 - 2 (DPAK)

Brand Category
MQTSUKI MQTSUKI

Fet Type
p trench p trench

Drain To Source Voltagevdss
60 V 60 V

Continuous Drain Current Id @ 25°C
17.7 A (t C) 17.7 A (t C)

Vgsth Max @ Id
3v @ 250ua 3v @ 250ua

Rds On Max @ Id Vgs
78 m @ 20a,10v 78 m @ 20a,10v

Power Dissipation Max
39.1 W 39.1 W

Drain Source Voltage Vdss
60 V 60 V

Continuous Drain Current Id
17.7 A 17.7 A

Power Dissipation Pd
39.1 W 39.1 W

Drain Source On Resistance Rdson@Vgs Id
78 mOhms @10V , 20A 78 mOhms @10V , 20A

Gate Threshold Voltage Vgsth@Id
3 V @250uA 3 V @250uA

Type
P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

ME20P06-G Alternative Parts

We are delighted to provide the ME20P06-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ME20P06-G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The ME20P06-G with MOSFET P Trench 60V 17.7A (Tc) 3V @ 250uA 78mÎ© @ 20A, 10V is a TO-252-2 (DPAK) RoHS manufactured by MQTSUKI. The part is a high-speed, low-RDSon power MOSFET suitable for synchronous rectification applications. It has an operating voltage of 60V and an RDSon of 17.7A (Tc). It provides an exceptionally low threshold voltage of 3V @ 250uA and a low gate charge of 78mÎ© @ 10V and 20A. The package size is only 2x2mm and it has been designed to be compatible with RoHS compliant manufacturing processes.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
17 Ship by Thu. 28 Nov to Tue. 03 Dec MOQ : 5 Multiples : 5	5 : USD 0.2148 50 : USD 0.1707 150 : USD 0.1519 500 : USD 0.1283 2500 : USD 0.1177 5000 : USD 0.1114

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