The SI2301AI-MS is a P-Channel MOSFET manufactured by MSKSEMI. It features a 20V breakdown voltage, 3A drain-source current, 64mO on-state resistance at 4.5V, 1W of power dissipation, 700mV of gate-to-source voltage at 250uA, 55pF of drain-to-source capacitance at 10V, 405pF of gate-to-source capacitance at 10V, and 3.3nC of insulation-gate capacitance at 2.5V. Additionally, it is rated to operate in temperatures ranging from -55? up to +150? (Tj) and is compliant with RoHS standards. The device is packaged in the SOT-23 form.