EMSC Embedded & Wirebond Silicon Capacitor Rev 3.5 Key features Key applications n Ultra low profile (100m) n Any demanding applications, such as medical, aerospace, automotive industrial n Ultra high stability of capacitance value: n Supply decoupling / filtering of active device w Temperature 0,5% (-55C to +150C) n High reliability applications w Voltage <0.1%/Volts n Devices with battery operations w Negligible capacitance loss through ageing n High temperature applications n Low leakage current down to 100pA n Volume limited applications n High reliability n High operating temperature (up to 150C) Thanks to the unique IPDiA Silicon capacitor The IPDiA technology features high reliability, up technology, most of the problems encountered in to 10 times better than alternative capacitor demanding applications can be solved. technologies, such as Tantalum or MLCC, and EMbedded Silicon Capacitors are available with eliminates cracking phenomena. thicknesses down to 80m and are the most Silicon Capacitor technology also offers a very appropriate solution for Chip On Board, Chip On stable capacitor value over the full operating Foil, Chip On Glass, Chip On Ceramic, flip chip voltage & temperature range, with a high and and embedded applications, when designers are stable insulation resistance. looking at utmost decoupling behaviours. This Silicon based technology is ROHS compliant EMSC are optimized for laminate substrate and compatible with lead free reflow soldering package, rigid/flex PCB, FR4, ceramic, glass, process. leadfr ame or foil platforms. The Silicon capacitor technology offers a capacitor integration capability (up to 250nF/mm ) which allows downsizing compared to existing solutions. EMSC Electrical Specification Capacitance value Parameters Value 10 15 22 33 39 47 68 Capacitance range 390pF to 4.7F (***) Contact Contact Contact Contact 390pF/0202/30V 470pF/0202/30V 680pF/0202/30V 15% Capacitance tolerances 10pF IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales 935 121 72C 339 935 121 72C 347 935 121 72C 368 Operating temperature (**) -55 to 150 C 1nF/0202/30V Contact Contact Contact Contact Contact Contact range 0.1nF 935 121 72C 410 IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales Storage temperatures - 70 to 165 C 10nF/0202/30V Contact Contact 33nF/0404/30V Contact Contact Contact 1nF Temperature coefficient 0.5%, from -55 to +150C 935 121 72C 510 IPDIA Sales IPDIA Sales 935 121 72F 533 IPDIA Sales IPDIA Sales IPDIA Sales 100nF/0404/11V Contact Breakdown Voltage (BV) 30V, 11V 935 121 42F 610 Contact 220nF/0505/11V Contact IPDIA Sales Contact Contact Capacitance variation 10nF 0.1 % /V (from 0 V to RVDC) 100nF/0605/30V IPDIA Sales 935 121 42H 622 IPDIA Sales IPDIA Sales IPDIA Sales versus RVDC 935 121 72G 610 Equivalent Serial Inductor 1F/1208/11V Contact Max 100 pH (ESL) 935 121 42S 710 Contact 2.2F/1612/11V 3.3F/1616/11V IPDIA Sales 4.7F/2016/11V 0.1F 1F/1616/30V IPDIA Sales 935 121 42V 722 935 121 42Y 733 935 121 42X 747 Equivalent Serial Resistor Max 0.1W 935 121 72Y 710 (ESR) Insulation resistance 100GW min 3V,25C (*) 80m thickness on request Negligible, < 0.001% / 10000h Aging (**) For extended temperature range (up to +250C), see Embedded Xtreme Temperature Silicon Capacitor product (EXSC). FIT<0.017 parts / billions Reliability hours (*) (***) other values on request Max 100m Capacitor height . Temperature coefficient DC Voltage stability ESL (nH) 25C PICS vs. MLCC capacitors MLCC capacitors vs. PICS 0 4 C0O2 GC(N0GPO(NP)vOs.) PvsIC. SP ICS 20 10 1,1 PICS 10 1 0 PICS C0G PICS 0 0,9 -10 C0G C0G C0G -10 X8R 0,8 X8R -20 X7R X7R -30 0,7 -20 Z5U X7R 0,6 -40 -30 0,5 -50 -40 0,4 -60 -50 Z5U 0,3 -70 -60 0,2 -80 Y5V -70 PICS Y5V 0,1 Y5V -90 -80 0 -50 0 50 100 150 200 -100 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0 1 2 3 4 5 6 7 Temperature (C) Capacitance (pF) Bias voltage (V) Fig.1 Capacitance change versus temperature Fig.2 Capacitance change versus voltage Fig.3 ESL versus capacitance value variation compared to alternative technologies variation compared to alternative compared to alternative technologies Part Number 935.121. B. 2. S. U xx Value 10 15 Breakdown 22 Voltage Size Unit 33 i.e: 100nF/0404 935 121 42F 610 4 = 11V F = 0404 5 = 1 n G = 0605 0 = 10 f 39 1= 20V H = 0505 1 = 0.1 p 6 = 10 n C = 0202 47 7= 30V I = 0302 2 = 1 p 7 = 0.1 V = 1612 68 6= 50V S =1208 3 = 10 p 8 = 1 Y = 1616 52=90V V =1216 4 = 0.1 n 9 = 10 X =2016 Termination Pad finishing in Aluminum ( 3m thickness +/-10%), other finishing available such as copper, nickel or gold. Applicable for almost all embedded applications. Parts should be glued with non conductive paste. If conductive glue is used on the backside of the silicon cap, it is strongly recommended to connect the backside and pads 3&4 to the same level (GND preferred). Pinning definition & Outline 0202 0203 0303 0404 0505 0605 1208 1612 1616 2016 pin Symbol Description Typ. 0.58 0.64 0.80 1.00 1.25 1.50 3.00 4.00 4.00 5.00 A 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1, 2 Signal Signal Comp. 0.58 0.80 0.80 1.00 1.25 1.25 2.00 3.00 4.00 4.00 B 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 3, 4 GND Ground size c 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 d 0,3 0,72 0,97 1,22 2,72 3,72 3,72 4,72 e 0,3 0,72 0,97 1,22 1,72 2,72 3,72 3,72 Packaging Tape and reel, tray, waffle pack or wafer delivery. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information For more information, please visit: