ETSC Embedded & Wirebond Temperature Silicon Capacitor Rev 3.6 Key features Key applications All applications up to 200C, such as High Operating temperature ( 200C) defense, downhole and automotive Low profile (250m) industries High stability of capacitance value: High reliability applications Temperature 1% (-55C to +200C) Replacement of X7R and C0G dielectrics Voltage <0.1%/Volts Decoupling / Filtering / Charge pump Negligible capacitance loss through ageing (i.e.: motor management, temperature sensors) Low leakage current down to 100pA Downsizing High reliability Pad finishing : Aluminum Thanks to the unique IPDiA Silicon capacitor ETSC provides the highest capacitor stability over technology, most of the problems encountered in the full -55C/+200C temperature range in the demanding applications can be solved. market with a TC<1%. Embedded Temperature Silicon Capacitors are The IPDiA technology offers industry leading dedicated to applications where reliability up to performances relative to Failure rate with a 200C is the main parameter. FIT<0,017. ETSC are the most appropriate solution for Chip This technology also offers high reliability, up to On Board, Chip On Foil, Chip On Glass, Chip On 10 times better than alternative capacitor Ceramic, flip chip and embedded applications. technologies, such as Tantalum or MLCC, and This technology features a capacitor integration eliminates cracking phenomena capability (up to 250nF/mm ) which offers This Silicon based technology is ROHS compliant capacitance value similar to X7R dielectric, but and compatible with lead free reflow soldering with better electrical performances than C0G/NP0 process. dielectrics, up to 200C. Arial 18 Bold Rev. Commercial Leaflet ETSC Electrical specification Parameters Value Capacitance value (*) Capacitance range 390pF to 4.7F 10 15 22 33 39 47 68 (*) 15% Capacitance tolerances Contact Contact Contact Contact 390pF/0202/30V 470pF/0202/30V 680pF/0202/30V (**) 10pF Operating temperature range -55 to 200 C IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales 935 124 72C 339 935 124 72C 347 935 124 72C 368 - 70 to 215 C Storage temperatures 1nF/0202/30V Contact Contact Contact Contact Contact Contact 0.1nF 1%, from -55 to +200C 935 124 72C 410 IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales Temperature coefficient 10nF/0202/30V Contact Contact 33nF/0404/30V Contact Contact Contact Breakdown Voltage (BV) 30, 11V 1nF 935 124 72C 510 IPDIA Sales IPDIA Sales 935 124 72F 533 IPDIA Sales IPDIA Sales IPDIA Sales Capacitance variation versus 100nF/0404/11V Contact 0.1 % /V (from 0 V to RVDC) RVDC 935 124 42F 610 Contact 220nF/0505/11V Contact IPDIA Sales Contact Contact 10nF Equivalent Serial Inductor (ESL) Max 100 pH 100nF/0605/30V IPDIA Sales 935 124 42H 622 IPDIA Sales IPDIA Sales IPDIA Sales 935 124 72G 610 Equivalent Serial Resistor (ESR) Max 0.1 1F/1208/11V Contact 50G min RVDC,25C Insulation resistance 935 124 42S 710 Contact 2.2F/1612/11V 3.3F/1616/11V IPDIA Sales 4.7F/2016/11V 20G min RVDC,200C 0.1F 1F/1616/30V IPDIA Sales 935 124 42V 722 935 124 42Y 733 935 124 42X 747 Negligible, < 0.001% / 10000h Aging 935 124 72Y 710 FIT<0.017 parts / billions hours Reliability (*) Capacitor height Max 250m (*) Other values on request Temperature coefficient PICS vs. MLCC capacitors (**) For extended temperature range (up to +250C), see Embedded Xtreme Temperature Silicon Capacitor product (EXSC). 20 10 Temperature coefficient PICS Temperature coefficient DC Voltage stability ESL (nH) 25C 0 PICS vs. MLPCICC Sc avpsa. cMitLoCrsC capacitors MLCC capacitors vs. PICS C0G 0 4 C0O2 GC(N0GPO(NP)vOs.) PvsIC. SP ICS -2010 X8R 20 10 1,1 X7R PICS 10 10 -20 0 1 PICS PICS C0G 0 -300 0,9 -10 C0G C0G C0G --1400 X8R X8R -20 0,8 -10 X7R X7R --2500 -30 0,7 -20 Z5U X7R -40 0,6 -30 --3600 0,5 -50 --4700 -40 Y5V 0,4 -60 --5800 -50 Z5U Z5U -50 0 50 100 150 200 0,3 -70 -60 -60 Temperature (C) 0,2 -80 Y5V -70 PICS -70 Y5V Y5V 0,1 -90 -80 -80 0 -50 -50 0 0 50 50 100 100 150 150 200 200 -100 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0 1 2 3 4 5 6 7 Temperature (TCe)mperature (C) Capacitance (pF) Bias voltage (V) Fig.1 Capacitance change versus temperature Fig.2 Capacitance change versus voltage Fig.3 ESL versus capacitance value variation compared to alternative technologies variation compared to alternative compared to alternative technologies technologies Part Number 935.124. B.2. S. U xx Value 10 Breakdown 15 Voltage Size Unit 22 i.e: 100nF/0404 935 124 42F 610 4 = 11V F = 0404 5 = 1 n G= 0605 0 = 10 f 33 1= 20V H = 0505 6 = 10 n C = 0202 1 = 0.1 p 39 7= 30V I = 0302 7 = 0.1 V = 1612 2 = 1 p 47 6= 50V S =1208 8 = 1 Y = 1616 3 = 10 p 68 52=90V V =1216 9 = 10 X =2016 4 = 0.1 n Termination 4 = 0.1n Pad finishing in Aluminum (3m thickness +/-10%) Applicable for almost all embedded applications. Parts should be glued with non conductive paste. If conductive glue is used on the backside of the silicon cap, it is strongly recommended to connect the backside and pads 3&4 to the same level (GND preferred). Pinning definition & Outline 0202 0302 0303 0404 0505 0605 1208 1612 1616 2016 Typ. pin Symbol Description 0.58 0.80 0.80 1.00 1.25 1.50 3.00 4.00 4.00 5.00 A 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1, 2 Signal Signal 0.58 0.64 0.80 1.00 1.25 1.25 2.00 3.00 4.00 4.00 Comp. B 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 3, 4 GND Ground size c 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 d 0,3 0,52 0,52 0,72 0,97 1,22 2,72 3,72 3,72 4,72 e 0,3 0,36 0,52 0,72 0,97 1,22 1,72 2,72 3,72 3,72 Packaging Tape and reel, tray, waffle pack or wafer delivery. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information For more information, please visit: