Wire Bonding Silicon Vertical Capacitor
WBSC142.xxx
Rev 3.2
Key features
Key applications
Any demanding applications, such as
Full compatible to monolithic ceramic capacitors
medical, aerospace, automotive industri a l
Ultra high stability of capacitance value:
Applicable for standard wire bonding
Temperature 1 % (-55 C to +150 C)
approach (Top & Bottom Gold metalizations)
Voltage < 0.1 % / Volts
Decoupling / Filtering / Charge pump
Negligible capacitance loss through ageing
(i.e: Pacemakers / defibrillators)
Custom sizes, values, shapes, tolerances and
High reliability applications
high er voltage
Downsizing
Low leakage current down to 100 pA
Low profile
Thanks to the unique IPDiA Silicon capacitor The IPDiA technology is the most appropriate
technology, most of the problems encountered in solution for Chip On Board, Chip On Foil, Chip On
demanding applications can be solved. Glass, Chip On Ceramic, flip chip and embedded
The capacitor integration capability (up to applications, when designers are looking at
250nF/mm ) allows smaller footprint than utmost decoupling behaviours.
ceramic alternative to answer strong volumes This Silicon based technology is ROHS compliant
constraints. and compatible with lead free reflow soldering
This technology provides industry leading process.
performances relative to the capacitor stability
over the full operating voltage & temperature
range.
This technology also offers high reliability, up to
10 times better than ceramic capacitors and
eliminates cracks phenomenon.
Unit
Arial 18 Bold
Rev. Commercial Leaflet
WBSC142.xxx
Electrical specification
(*) Other values on request
Capacitance value Parameters Value
Capacitance range 10pF to 22nF
10 15 22 33 47 68
(*)
15%
Capacitance tolerances
10pF: 15pF: 22pF: 33pF: 47pF: 68pF:
(*)
Operating temperature range -55 to 150 C
1pF 935.142.522.210
935.142.528.210 935.142.528.215 935.142.528.222 935.142.528.233 935.142.528.247 935.142.528.268
Storage temperatures - 70 to 165 C
100pF: 150pF: 220pF: 330pF: 680pF:
Temperature coefficient 1%, from -55 to +150C
Contact
(*)
10pF
Breakdown Voltage (BV) 150, 50, 30
935.142.522.310 935.142.522.315 935.142.528.322 935.142.528.333 IPDIA Sales 935.142.521.368
935.142.521.310 935.142.528.315
Capacitance variation versus
0.1 % /V (from 0 V to RVDC)
RVDC
1nF: Contact Contact Contact Contact Contact
0.1nF Equivalent Serial Inductor (ESL) Max 100 pH
935.142.521.410 IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales
Equivalent Serial Resistor (ESR) Max 100 m
Insulation resistance 100G @ 16V, from -55 to 150C
22nF:
10nF: Contact Contact Contact Contact
Aging Negligible, < 0.001% / 1000h
1nF 935.142.827.522
935.142.620.510 IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales
FIT<0.017 parts / billions hours,
935.142.624.522
Reliability
RVDC, from -55 to +150C
(*)
Max 250m
Capacitor height
Contact Contact Contact Contact Contact Contact
10nF
Temperature coefficient
IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales: IPDIA Sales
PICS vs. MLCC capacitors
20
10
PICS
Temperature coefficient DC Voltage stability
0 Temperature coefficient
PICS vs. MLCC capacitors
PICS vs. MLCC capacitors MLCC capacitors vs. PICS
C0G
X8R
20 -2010
10
X7R PICS
-1020
10 0
PICS
PICS
-300
0 -10
C0G
C0G
C0G
X8R
-10 --1400 X8R -20
X7R
X7R
--2500 -30
-20
Z5U
X7R
--3600 -40
-30
-50
-40 --4700
Y5V
-60
--5800
-50
Z5U
Z5U
-50 0 50 100 150 200
-70
-60
-60
Temperature (C)
-80
Y5V
-70 -70
Y5V
Y5V
-90
-80
-80
-50 0 50 100 150 200 -100
-50 0 50 100 150 200
0 1 2 3 4 5 6 7
Temperature (C)
Temperature (C)
Bias voltage (V)
Fig.1 Capacitance change versus temperature Fig.2 Capacitance change versus voltage
variation compared to alternative technologies variation compared to alternative
technologies
Part Number
Value (E6)
935.142 B.2 S. U xx
10
15
Breakdown
22
Voltage
Size Unit
33
0 = 0303 7 = 0402 0 = 10 f 5 = 1 n
i.e: 10nF/0303 case (WBSC type)
8= 30V 47
1 = 0202 8 = 0201 1 = 0.1 p 6 = 10 n
6= 50V 68
935.142.620.510
2 = 0101 2 = 1 p 7 = 0.1
5= 150V
3 = 0404 3 = 10 p 8 = 1
4 = 0504 4 = 0.1 n 9 = 10
52=90V
5 = 0302
4 = 0.1n
6 = 0503
Unit
Termination & Outline
0 = 10f 5 = 1n
1 = 0.1p 6 = 10n
2 = 1p 7 = 0.1u
Termination
Package outline3 = 10p 8 = 1u
4 = 0.1n 9 = 10u
Ti (0.1m)/Ni(0.3m)/Au(0.2m) for bottom
Typ. 0101 0201 0202 0303 0402 0404 0504
Electrode metalization Typ. COB
0.26 0.463 0.463 0.80 1.02 1.02 1.37
Pads opening 60m
A
0.02 0.05 0.05 0.05 0.05 0.05 0.05
Top electrode : TiW/Au Comp.
Min pitch 100m
size 0.26 0.26 0.463 0.80 0.463 1.02 1.02
B
Other finishings are available on request such as
L 1.910.05
0.02 0.02 0.05 0.05 0.05 0.05 0.05
100nF Comp. size
W 0.750.05
Top
Aluminum or Copper (Cu:5um). Back
metalization
metalization A
area
area
L 3.820.05
C
Applicable for standard wire bonding approach 1uF Comp. size
W 1.650.05
(ball and wedge).
L 3.820.05
3.6uF Comp. size e
Typical dimensions, all dimensions in mm. W 4.800.05
B
Package outline
Packaging
d
Tape and reel, tray, waffle pack or wafer delivery.
Tape and reel, tray, waffle pack or wafer delivery
Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner. The information For more information, please visit: