935142624522 Murata

Wire Bonding Silicon Vertical Capacitor WBSC142.xxx Rev 3.2 Key features Key applications Any demanding applications, such as Full compatible to monolithic ceramic capacitors medical, aerospace, automotive industri a l Ultra high stability of capacitance value: Applicable for standard wire bonding Temperature 1 % (-55 C to +150 C) approach (Top & Bottom Gold metalizations) Voltage < 0.1 % / Volts Decoupling / Filtering / Charge pump Negligible capacitance loss through ageing (i.e: Pacemakers / defibrillators) Custom sizes, values, shapes, tolerances and High reliability applications high er voltage Downsizing Low leakage current down to 100 pA Low profile Thanks to the unique IPDiA Silicon capacitor The IPDiA technology is the most appropriate technology, most of the problems encountered in solution for Chip On Board, Chip On Foil, Chip On demanding applications can be solved. Glass, Chip On Ceramic, flip chip and embedded The capacitor integration capability (up to applications, when designers are looking at 250nF/mm ) allows smaller footprint than utmost decoupling behaviours. ceramic alternative to answer strong volumes This Silicon based technology is ROHS compliant constraints. and compatible with lead free reflow soldering This technology provides industry leading process. performances relative to the capacitor stability over the full operating voltage & temperature range. This technology also offers high reliability, up to 10 times better than ceramic capacitors and eliminates cracks phenomenon. Unit Arial 18 Bold Rev. Commercial Leaflet WBSC142.xxx Electrical specification (*) Other values on request Capacitance value Parameters Value Capacitance range 10pF to 22nF 10 15 22 33 47 68 (*) 15% Capacitance tolerances 10pF: 15pF: 22pF: 33pF: 47pF: 68pF: (*) Operating temperature range -55 to 150 C 1pF 935.142.522.210 935.142.528.210 935.142.528.215 935.142.528.222 935.142.528.233 935.142.528.247 935.142.528.268 Storage temperatures - 70 to 165 C 100pF: 150pF: 220pF: 330pF: 680pF: Temperature coefficient 1%, from -55 to +150C Contact (*) 10pF Breakdown Voltage (BV) 150, 50, 30 935.142.522.310 935.142.522.315 935.142.528.322 935.142.528.333 IPDIA Sales 935.142.521.368 935.142.521.310 935.142.528.315 Capacitance variation versus 0.1 % /V (from 0 V to RVDC) RVDC 1nF: Contact Contact Contact Contact Contact 0.1nF Equivalent Serial Inductor (ESL) Max 100 pH 935.142.521.410 IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales Equivalent Serial Resistor (ESR) Max 100 m Insulation resistance 100G @ 16V, from -55 to 150C 22nF: 10nF: Contact Contact Contact Contact Aging Negligible, < 0.001% / 1000h 1nF 935.142.827.522 935.142.620.510 IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales FIT<0.017 parts / billions hours, 935.142.624.522 Reliability RVDC, from -55 to +150C (*) Max 250m Capacitor height Contact Contact Contact Contact Contact Contact 10nF Temperature coefficient IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales: IPDIA Sales PICS vs. MLCC capacitors 20 10 PICS Temperature coefficient DC Voltage stability 0 Temperature coefficient PICS vs. MLCC capacitors PICS vs. MLCC capacitors MLCC capacitors vs. PICS C0G X8R 20 -2010 10 X7R PICS -1020 10 0 PICS PICS -300 0 -10 C0G C0G C0G X8R -10 --1400 X8R -20 X7R X7R --2500 -30 -20 Z5U X7R --3600 -40 -30 -50 -40 --4700 Y5V -60 --5800 -50 Z5U Z5U -50 0 50 100 150 200 -70 -60 -60 Temperature (C) -80 Y5V -70 -70 Y5V Y5V -90 -80 -80 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 0 1 2 3 4 5 6 7 Temperature (C) Temperature (C) Bias voltage (V) Fig.1 Capacitance change versus temperature Fig.2 Capacitance change versus voltage variation compared to alternative technologies variation compared to alternative technologies Part Number Value (E6) 935.142 B.2 S. U xx 10 15 Breakdown 22 Voltage Size Unit 33 0 = 0303 7 = 0402 0 = 10 f 5 = 1 n i.e: 10nF/0303 case (WBSC type) 8= 30V 47 1 = 0202 8 = 0201 1 = 0.1 p 6 = 10 n 6= 50V 68 935.142.620.510 2 = 0101 2 = 1 p 7 = 0.1 5= 150V 3 = 0404 3 = 10 p 8 = 1 4 = 0504 4 = 0.1 n 9 = 10 52=90V 5 = 0302 4 = 0.1n 6 = 0503 Unit Termination & Outline 0 = 10f 5 = 1n 1 = 0.1p 6 = 10n 2 = 1p 7 = 0.1u Termination Package outline3 = 10p 8 = 1u 4 = 0.1n 9 = 10u Ti (0.1m)/Ni(0.3m)/Au(0.2m) for bottom Typ. 0101 0201 0202 0303 0402 0404 0504 Electrode metalization Typ. COB 0.26 0.463 0.463 0.80 1.02 1.02 1.37 Pads opening 60m A 0.02 0.05 0.05 0.05 0.05 0.05 0.05 Top electrode : TiW/Au Comp. Min pitch 100m size 0.26 0.26 0.463 0.80 0.463 1.02 1.02 B Other finishings are available on request such as L 1.910.05 0.02 0.02 0.05 0.05 0.05 0.05 0.05 100nF Comp. size W 0.750.05 Top Aluminum or Copper (Cu:5um). Back metalization metalization A area area L 3.820.05 C Applicable for standard wire bonding approach 1uF Comp. size W 1.650.05 (ball and wedge). L 3.820.05 3.6uF Comp. size e Typical dimensions, all dimensions in mm. W 4.800.05 B Package outline Packaging d Tape and reel, tray, waffle pack or wafer delivery. Tape and reel, tray, waffle pack or wafer delivery Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information For more information, please visit: