+ UBEC/ULEC 60 GHz Ultra Broadband Embedding silicon Capacitor Wire Bondable Rev 1.5 Key Features Key Applications + Ultra broadband performance > 60 GHz Optoelectronics/high-speed data Resonance free Trans-Impedance Amplifiers (TIA) Phase stability Receive-and-Transmit Optical Sub-Assembly Ultra high stability of capacitance value over: (ROSA/TOSA) - Temperature < 0.5% (-55C to +150C) Synchronous Optical Networking (SONET) - Voltage < 0.1%/V High speed digital logic - Aging < 0.001%/1000 hours Broadband test equipment Low ESL Broadband microwave/millimeter wave High reliability (FIT < 0.017 parts/billion hours) Replacement of X7R and NP0 Compatible with standard wire bonding assembly Low profile applications (100 m) (ball and wedge)* * Please refer to our Assembly Application Note for more details UBEC/ULEC Capacitors target optical communi- The UBEC/ULEC capacitors provide very high cation systems (ROSA/TOSA, SONET and all reliability and capacitance stability over tempera- optoelectronics) as well as high speed data sys- ture (0.5%) and voltage. They have an extended tems or products. The UBEC/ULEC are designed operating temperature range from -55 to 150C . for DC decoupling and bypass applications. The Reliable and repeatable performances are ob- unique technology of integrated passive devices tained thanks to a fully controlled production line in silicon developed by IPDiA, offers high rejec- with high temperature curing (above 900C) gene- tion up to 60 GHz for the UBEC and up to 20 GHz rating a highly pure oxide. These capacitors are for the ULEC. These deep trench silicon capaci- compatible with standard wire bonding assembly tors have been developed with a semiconductor (ball and wedge). They are are RoHS-compliant MOS process. and are available with thick Aluminum termina- tions. IPDiA Capacitors UBEC/ULEC Series Electrical Specifications Parameters Value Part number Product description Case Size Thickness (**) Capacitance range 10nF to 220 nF Ultra Broadband Embedding/Wire bonding Silicon UBEC.xxx (**) Capacitor from -55 to 150C, 60GHz with Al termination Capacitance tolerance 15 % Operating temperature range -55 C to 150 C 935 157 42F 610 Ultra Broadband Embedding/Wire bonding Silicon 0404 100m Capacitor 100nF, 60GHz, BV>11V Storage temperature - 70 C to 165 C Temperature coefficient <0.5 %, from -55 C to +150 C (**) Breakdown voltage (BV) 11, 30 V Ultra Largeband Embedding/Wire bonding Silicon ULEC.xxx Capacitance variation Capacitor, from -55 to 150C, 20GHz with Al termination 0.1 %/V (from 0 V to RVDC) versus RVDC 935 158 42F 610 Ultra Largeband Embedding/Wire bonding Silicon 0404 100m Equivalent Serial Inductance (***) Capacitor 100nF, 20GHz, BV>11V Max 100 pH (ESL) Equivalent Serial Resistance (***) Max 400 m (ESR) Insulation resistance 100 G min RVDC & +25C Negligible, < 0.001 % / 1000h Aging FIT<0.017 parts / billion hours Reliability Max 100 m Capacitor height (**) Other values on request. (***) e.g. 100nF/0404/BV 11V Fig.1: Capacitance variation vs temperature Fig.2: Capacitance variation vs DC biasing voltage (for UBEC and MLCC technologies) (for UBEC and MLCC technologies) Part Number Available parts see table above For other values, contact your IPDiA sales representative Termination and Outline Termination Package Outline Can be directly mounted on the PCB using For landing pad dimensions on your PCB layout, please refer die bonding and wire bonding. to IPDiA assembly application note. Capacitors with top electrodes in 3m Case size (typ. 0.01mm) ( mm ) Aluminum (Al/Si/Cu). Other top finishings L W T available on request (ex: Ti/Cu/Ni/Au). 0202 0.62 0.62 0.10 (low 0302 0.89 0.62 Compatible with standard wire bonding profile) 0404 1.06 1.06 assembly (ball and wedge). 0505 1.29 1.29 Packing Tape and reel, waffle pack, film frame carrier or raw wafer delivery. For more information, please visit: