ATSC Automotive high Temperature Si Capacitors up to 200C Rev 1.8 Key features Key applications Qualified according to AEC-Q100 Harsh conditions sensors Ultra long life 200C 200C sensors High stability of capacitance value over temperature, Ignition sensors voltage and ageing Oil pressure sensors 16 V operating voltage Temperature sensors Load dump Motor management sensors 8 kV HBM ESD Turbo charger sensors Suitable for high temperature leadframe mounting Hall effect sensors (please refer to our Assembly Application Note for more details) The ATSC capacitors target Under-the-hood electronics and all sensors exposed to harsh conditions in the automotive market segment. The deep trench MOS capacitors manufactured in Murata* IATF 16949 certified facility, combined with a unique Mosaic structure and distributed trench capacitors drive an unprecedented level of electrical perfomances. Thanks to the purity of the oxide cured at a temperature of 900C during the manufacturing process, Murata is now offering a range of capacitors qualified according to AEC-Q100 conditions up to 200C with a lifetime that has never been equaled. The Sicap technology features high reliability -up to 10 times better than alternative capacitor technologies- coupled with high stability and low profile . The ATSC capacitors offer enhanced decoupling performances compared with standard competitors SMD solutions and is fully compatible with a System in Package assembly and a leadframe. *Murata Integrated Passive Solutions Ref: CLATSC1.8 1Murata Silicon Capacitors - ATSC Series Rev 1.8 Electrical specifications Automotive high Temp. Si Capacitors Parameter Value ATSC.xxx from -55C to 200C Capacitance range 390 pF to 1 F(*) Part number Capacitance BV Case size Thickness Capacitance tolerances 15 %(*) 935174730339-T3A 390 pF 30 V 0202 250 m Operating temperature range -55 to 200C 935174730347-T3A 470 pF 30 v 0202 250 m Storage temperature range - 70 to 215C(**) 935174730368-T3A 680 pF 30 V 0202 250 m Temperature coefficient +80 ppm/K 935174730410-T3A 1 nF 30 V 0202 250 m Breakdown Voltage (BV) 30 VDC 935174730510-T3A 10 nF 30 V 0202 250 m Rated voltage 16 VDC 935174732547-T3A 47 nF 30 V 0505 250 m Capacitance variation versus voltage 0.1 %/V (from 0 V to RVDC) 935174733610-T3A 100 nF 30 V 0605 250 m 50 G 10 V, 25C, t>120s, for Insulation resistance 100 nF, or 15G 15V for 100 nF 935174736710-T3A 1 F 30 V 1616 250 m Ageing Negligible, < 0.001% / 1000 h Reliability FIT<0.017 parts / billions hours (*) other values on request (**) w/o packing ov v v c(v cov c)v r r v v 1 4 c(v c6v -vv -v ovv o-v (vv (-v v(n- -4n- ov o(n-o- r r0 G r r r0G Fig. 1: Capacitance variation vs temperature Fig.2: Capacitance variation vs DC biasing voltage (for ATSC and MLCC technologies) BV 30 (for ATSC and MLCC technologies) Capacitance range 1616 0605 Available parts. 0505 BV 30V For other values, contact your Murata sales representative. 0202 10pF 100pF 1nF 10nF 100nF Capacitance 1F Termination Package outline Pad finishing in Aluminum. Applicable for high Case size Pad dimensions (0.05 m) temperature wirebonding and other mountings. Other finishing available such as nickel or gold. A B c d e 0202 0.63 0.63 0.15 0.293 0.293 1.32 1.32 0.15 0.96 0.96 0505 0605 1.59 1.32 0.15 1.160 0.96 1616 4.07 4.07 0.15 3.44 3.44 Packaging Tape and reel, waffle pack or wafer delivery. Ref: CLATSC1.8 2 390pF 470pF 680pF r r0iG 47nF r r0iG