SemiconductorThe NCE65T180T with 650V 21A 150mO@10V,10.5A 188W N Channel TO-247-3 MOSFETs ROHS is a n-channel high voltage field-effect transistor (FET) manufactured by NCE Power Semiconductor. It has a breakdown voltage of 650V and a drain current of 21A at 10V (150mO). The maximum total power dissipation is 188W, meaning it can handle 10.5A at any given voltage. This particular model is compliant with the EU's RoHS (Restriction of Hazardous Substances) Directive, meaning it does not contain any hazardous elements such as lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). It is packaged in a TO-247-3 package, a three-leaded version of the industry standard TO-247 package.