2N7002KQBZ Nexperia

2N7002KQB 60 V N-channel Trench MOSFET 22 September 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Side wettable flanks for optical solder inspection Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C) AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -16 - 16 V GS I drain current V = 10 V T = 25 C 1 - - 720 mA D GS amb Static characteristics R drain-source on-state V = 10 V I = 720 mA T = 25 C - 635 850 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia 2N7002KQB 60 V N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 S source 3 3 D drain G 1 2 Transparent top view S DFN1110D-3 (SOT8015) 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002KQB DFN1110D-3 plastic, leadless extremely thin small outline package with SOT8015 side-wettable flanks (SWF) 3 terminals 0.65 mm pitch 1.1 mm x 1 mm x 0.48 mm body 7. Marking Table 4. Marking codes Type number Marking code C7 2N7002KQB 2N7002KQB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 22 September 2021 2 / 15