Product Information

BAS116GWX

BAS116GWX electronic component of Nexperia

Datasheet
Diodes - General Purpose, Power, Switching BL Bipolar Discretes

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0308 ea
Line Total: USD 92.4

20370 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
9818 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BAS116GWX
Nexperia

1 : USD 0.0917
10 : USD 0.0908
25 : USD 0.0897
100 : USD 0.0622
250 : USD 0.0405
500 : USD 0.0331
1000 : USD 0.0324
3000 : USD 0.0324
6000 : USD 0.0324

20370 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

BAS116GWX
Nexperia

3000 : USD 0.0308
9000 : USD 0.0308
15000 : USD 0.0308
45000 : USD 0.0308
75000 : USD 0.0308

3404 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10
Multiples : 5

Stock Image

BAS116GWX
Nexperia

10 : USD 0.1313
100 : USD 0.0559
370 : USD 0.0442
1015 : USD 0.0416
12000 : USD 0.0416

9818 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 239
Multiples : 1

Stock Image

BAS116GWX
Nexperia

239 : USD 0.0603
250 : USD 0.0393
500 : USD 0.0321
1000 : USD 0.0315

     
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BAS116GW Low leakage switching diode 5 April 2018 Product data sheet 1. General description Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: t = 0.8 s rr Low leakage current: I = 3 pA R Repetitive peak reverse voltage V 85 V RRM Low capacitance: C = 2 pF d Small SMD plastic package AEC-Q101 qualified 3. Applications Low-leakage current applications General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse T = 25 C - - 85 V RRM j voltage I forward current t 300 s 0.02 T = 25 C - - 215 mA F p amb V reverse voltage T = 25 C - - 75 V R j V forward voltage I = 150 mA t 300 s 0.02 - - 1.25 V F F p T = 25 C j I reverse current V = 75 V pulsed T = 25 C - 0.003 5 nA R R j t reverse recovery time I = 10 mA I = 10 mA R = 100 - 0.8 3 s rr F R L I = 1 mA T = 25 C R(meas) jNexperia BAS116GW Low leakage switching diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K Cathode K A 1 2 sym001 2 A Anode SOD123 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS116GW SOD123 Plastic surface-mounted package 2 leads SOD123 7. Marking Table 4. Marking codes Type number Marking code BAS116GW GB BAS116GW All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 5 April 2018 2 / 11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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