X-On Electronics has gained recognition as a prominent supplier of BAS416F Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAS416F Diodes - General Purpose, Power, Switching are a product manufactured by Nexperia. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAS416F Nexperia

BAS416F electronic component of Nexperia
BAS416F Nexperia
BAS416F Diodes - General Purpose, Power, Switching
BAS416F  Semiconductors

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See Product Specifications
Part No. BAS416F
Manufacturer: Nexperia
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching DIODE-GP POWER SWITCHING
Datasheet: BAS416F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2375 ea
Line Total: USD 0.24 
Availability - 3603
Ship by Thu. 23 Jan to Mon. 27 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3603
Ship by Thu. 23 Jan to Mon. 27 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2375
10 : USD 0.161
100 : USD 0.0725
1000 : USD 0.059
2500 : USD 0.051
10000 : USD 0.0443
20000 : USD 0.0429
50000 : USD 0.0389
100000 : USD 0.0362

   
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We are delighted to provide the BAS416F from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS416F and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAS416 Low-leakage diode 2 October 2020 Product data sheet 1. General description Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. 2. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. AEC-Q101 qualified 3. Applications Low-leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current T = 25 C - - 200 mA F j V repetitive peak reverse - - 85 V RRM voltage V forward voltage I = 50 mA T = 25 C - - 1.1 V F F j I reverse current V = 75 V pulsed T = 25 C - 0.003 5 nA R R j t reverse recovery time I = 10 mA I = 10 mA R = 100 - 0.8 3 s rr F R L I = 1 mA T = 25 C R(meas) j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 2 K A 2 A anode aaa-032142 SOD323Nexperia BAS416 Low-leakage diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS416 SOD323 plastic, surface-mounted package 2 leads 1.3 mm pitch 1.7 SOD323 mm x 1.25 mm x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code D4 BAS416 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse T = 25 C - 85 V RRM j voltage V reverse voltage - 75 V R I forward current - 200 mA F I non-repetitive peak t = 1 s square wave T = 25 C - 4 A FSM p j(init) forward current t = 1 ms square wave T = 25 C - 1 A p j(init) t = 1 s square wave T = 25 C - 0.5 A p j(init) I repetitive peak forward - 500 mA FRM current P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS416 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 2 October 2020 2 / 10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
NEXPERIA USA INC
Nexperia USA Inc.
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