BAS56 Nexperia

BAS56 High-speed double diode Rev. 3 29 June 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected. 1.2 Features and benefits High switching speed: t 6ns rr Reverse voltage: V 60 V R Repetitive peak reverse voltage: V 60 V RRM Repetitive peak forward current: I 600 mA FRM AEC-Q101 qualified Small SMD plastic package 1.3 Applications High-speed switching in e.g. surface-mounted circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit 1 2 I forward current -- 200 mA F I reverse current V =60V - - 100 nA R R V reverse voltage - - 60 V R 3 t reverse recovery time -- 6 ns rr 1 Single diode loaded. 2 Device mounted on an FR4 Printed-Circuit Board (PCB). 3 When switched from I = 400 mA to I = 400 mA R = 100 measured at I =40 mA. F R L RBAS56 NXP Semiconductors High-speed double diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode (diode 1) 4 3 43 2 cathode (diode 2) 3 anode (diode 2) 4 anode (diode 1) 1 2 12 006aab100 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS56 - plastic surface-mounted package 4 leads SOT143B 4. Marking Table 4. Marking codes 1 Type number Marking code BAS56 *L5 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BAS56 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 29 June 2010 2 of 12