BSH205G2AR Nexperia

BSH205G2A 20 V, P-channel Trench MOSFET 13 October 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Extended temperature range T = 175 C j Trench MOSFET technology Very fast switching AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -2.6 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2.6 A T = 25 C - 97 118 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia BSH205G2A 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 G gate D 2 S source G 3 D drain S 1 2 017aaa094 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BSH205G2A SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 Q8% BSH205G2A 1 % = placeholder for manufacturing site code BSH205G2A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 13 October 2020 2 / 15