BSS84AKMB Nexperia

BSS84AKMB 50 V, single P-channel Trench MOSFET Rev. 1 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ElectroStatic Discharge (ESD) protection up to 1 kV Very fast switching Ultra thin package profile with Trench MOSFET technology 0.37 mm height 1.3 Applications Relay driver High-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T=25C ---50 V V DS j gate-source voltage -20 - 20 V V GS 1 drain current V =-10 V T =25C ---230mA I D GS amb Static characteristics drain-source on-state V =-10 V I = -100 mA T =25C - 4.5 7.5 R DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT883BBSS84AKMB NXP Semiconductors 50 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 3 D drain 2 G Transparent top view SOT883B (DFN1006B-3) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS84AKMB DFN1006B-3 Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 0.6 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code BSS84AKMB 0000 0010 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description BSS84AKMB All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 6 June 2012 2 of 15