BSS84AKV NXP

BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C ---50 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =-10 V T =25C ---170mA D GS amb Static characteristics (per transistor) R drain-source on-state V =-10 V I = -100 mA -4.5 7.5 DSon GS D resistance T =25C j 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . SOT666BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source 1 6 5 4 D1 D2 2 G1 gate 1 3D2 drain 2 4S2 source 2 G1 G2 5 G2 gate 2 12 3 6D1 drain 1 SOT666 (SOT666) S1 S2 sym147 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS84AKV SOT666 plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes 1 Type number Marking code BSS84AKV EG 1 % = placeholder for manufacturing site code BSS84AKV All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 19 May 2011 2 of 17