X-On Electronics has gained recognition as a prominent supplier of BUK7K32-100EX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7K32-100EX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7K32-100EX Nexperia

BUK7K32-100EX electronic component of Nexperia
BUK7K32-100EX Nexperia
BUK7K32-100EX MOSFETs
BUK7K32-100EX  Semiconductors

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See Product Specifications
Part No. BUK7K32-100EX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET BUK7K32-100E/LFPAK56D/REEL 7
Datasheet: BUK7K32-100EX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.386 ea
Line Total: USD 1.39 
Availability - 27985
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
27985
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 1.386
10 : USD 1.133
100 : USD 0.8426
500 : USD 0.7073
1000 : USD 0.6589
1500 : USD 0.616
9000 : USD 0.6017
24000 : USD 0.5929

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Transistor Type
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK7K32-100EX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7K32-100EX and other electronic components in the MOSFETs category and beyond.

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BUK7K32-100E Dual N-channel 100 V, 27.5 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 2 - - 29 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 64 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 10 V I = 5 A T = 25 C Fig. 11 - 21.5 27.5 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 5 A V = 80 V V = 10 V - 12.9 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK7K32-100E Dual N-channel 100 V, 27.5 m standard level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7K32-100E LFPAK56D Plastic single ended surface mounted package SOT1205 (LFPAK56D) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7K32-100E 73210E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 64 W tot mb I drain current T = 25 C V = 10 V Fig. 2 - 29 A D mb GS T = 100 C V = 10 V Fig. 2 - 20.4 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 116 A DM mb p BUK7K32-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 2 September 2015 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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