X-On Electronics has gained recognition as a prominent supplier of BUK7K32-100EX MOSFET across the USA, India, Europe, Australia, and various other global locations. BUK7K32-100EX MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.
We are delighted to provide the BUK7K32-100EX from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7K32-100EX and other electronic components in the MOSFET category and beyond.
BUK7K32-100E Dual N-channel 100 V, 27.5 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 2 - - 29 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 64 W tot mb Static characteristics FET1 and FET2 R drain-source on-state V = 10 V I = 5 A T = 25 C Fig. 11 - 21.5 27.5 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q gate-drain charge I = 5 A V = 80 V V = 10 V - 12.9 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK7K32-100E Dual N-channel 100 V, 27.5 m standard level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 mbk725 6 D2 drain2 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7K32-100E LFPAK56D Plastic single ended surface mounted package SOT1205 (LFPAK56D) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7K32-100E 73210E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 64 W tot mb I drain current T = 25 C V = 10 V Fig. 2 - 29 A D mb GS T = 100 C V = 10 V Fig. 2 - 20.4 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 116 A DM mb p BUK7K32-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 2 September 2015 2 / 13