NXV100XP 30 V, P-channel Trench MOSFET 12 February 2021 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C 1 - - -1.5 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -1.5 A T = 25 C - 104 140 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .Nexperia NXV100XP 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source G 3 D drain S 017aaa257 1 2 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NXV100XP SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 %5P NXV100XP 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -30 V DS j V gate-source voltage -12 12 V GS I drain current V = -4.5 V T = 25 C 1 - -1.5 A D GS amb V = -4.5 V T = 100 C 1 - -0.95 A GS amb I peak drain current T = 25 C single pulse t 10 s - -6 A DM amb p P total power dissipation T = 25 C 2 - 340 mW tot amb 1 - 480 mW T = 25 C - 2.1 W sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode I source current T = 25 C 1 - -0.4 A S amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. NXV100XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 12 February 2021 2 / 12