X-On Electronics has gained recognition as a prominent supplier of PBLS2003D,115 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. PBLS2003D,115 Bipolar Transistors - Pre-Biased are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

PBLS2003D,115 Nexperia

PBLS2003D,115 electronic component of Nexperia
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Part No.PBLS2003D,115
Manufacturer: Nexperia
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased BISS LDSWITCH TAPE-7
Datasheet: PBLS2003D,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3057 ea
Line Total: USD 0.31 
Availability - 9189
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9189
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3057
10 : USD 0.2034
100 : USD 0.1108
1000 : USD 0.1012
3000 : USD 0.0778
9000 : USD 0.0756
24000 : USD 0.0745
45000 : USD 0.0724

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Emitter- Base Voltage Vebo
Height
Length
Width
Brand
Number Of Channels
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBLS2003D,115 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBLS2003D,115 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBLS2003D 20 V PNP BISS loadswitch Rev. 02 27 August 2009 Product data sheet 1. Product prole 1.1 General description PNP low V Breakthrough in Small Signal (BISS) transistor and NPN Resistor- CEsat Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features n Low V (BISS) and resistor-equipped transistor in one package CEsat n Low threshold voltage (< 1 V) compared to MOSFET n Low drive power required n Space-saving solution n Reduction of component count 1.3 Applications n Supply line switches n Battery charger switches n High-side switches for LEDs, drivers and backlights n Portable equipment 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 PNP low V transistor CEsat V collector-emitter voltage open base - - - 20 V CEO I collector current (DC) - - -1A C 1 R collector-emitter saturation I = - 1A - 185 280 m CEsat C resistance I = - 100 mA B TR2 NPN resistor-equipped transistor V collector-emitter voltage open base - - 50 V CEO I output current - - 100 mA O R1 bias resistor 1 (input) 7 10 13 k R2/R1 bias resistor ratio 0.8 1 1.2 1 Pulse test: t 300 s 0.02 p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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