X-On Electronics has gained recognition as a prominent supplier of PBRN113ET,215 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. PBRN113ET,215 Bipolar Transistors - Pre-Biased are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

PBRN113ET,215 Nexperia

PBRN113ET,215 electronic component of Nexperia
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Part No.PBRN113ET,215
Manufacturer: Nexperia
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased BISS RETS TAPE-7
Datasheet: PBRN113ET,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1859 ea
Line Total: USD 0.19 
Availability - 3363
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3363
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1859
10 : USD 0.1243
100 : USD 0.0649
3000 : USD 0.0572
9000 : USD 0.0407
24000 : USD 0.0396
45000 : USD 0.0385
99000 : USD 0.0374

   
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RoHS - XON
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Typical Input Resistor
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Collector- Emitter Voltage VCEO Max
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We are delighted to provide the PBRN113ET,215 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBRN113ET,215 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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PBRN113E series NPN 800 mA, 40 V BISS RETs R1 = 1 k, R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product prole 1.1 General description 800 mA NPN low V Breakthrough In Small Signal (BISS) Resistor-Equipped CEsat Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package Nexperia JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 1 PBRN113ES SOT54 SC-43A TO-92 PBRN113ET SOT23 - TO-236AB 1 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features n 800 mA output current capability n Low collector-emitter saturation voltage V CEsat n High current gain h n Reduces component count FE n Built-in bias resistors n Reduces pick and place costs n Simplies circuit design n 10 % resistor ratio tolerance 1.3 Applications n Digital application in automotive and n Switching loads industrial segments n Medium current peripheral driver 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 40 V CEO 1 I output current O PBRN113EK, PBRN113ET - - 600 mA PBRN113ES - - 800 mAPBRN113E series Nexperia NPN 800 mA, 40 V BISS RETs R1 = 1 k, R2 = 1 k Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit I repetitive peak output current ORM PBRN113EK, PBRN113ET t 1 ms 0.33 - - 800 mA p R1 bias resistor 1 (input) 0.7 1 1.3 k R2/R1 bias resistor ratio 0.9 1 1.1 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2. Pinning information Table 3. Pinning Pin Description Simplied outline Symbol SOT54 1 input (base) 2 2 output (collector) R1 1 3 GND (emitter) 1 2 R2 3 001aab347 3 006aaa145 SOT54A 1 input (base) 2 2 output (collector) R1 1 3 GND (emitter) 1 2 R2 3 001aab348 3 006aaa145 SOT54 variant 1 input (base) 2 2 output (collector) R1 1 3 GND (emitter) 1 2 R2 3 001aab447 3 006aaa145 SOT23 SOT346 1 input (base) 3 3 2 GND (emitter) R1 1 3 output (collector) R2 12 2 006aaa144 sym007 PBRN113E SER 1 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 1 March 2007 2 of 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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