X-On Electronics has gained recognition as a prominent supplier of PBRN123YT,215 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. PBRN123YT,215 Bipolar Transistors - Pre-Biased are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

PBRN123YT,215 Nexperia

PBRN123YT,215 electronic component of Nexperia
PBRN123YT,215 Nexperia
PBRN123YT,215 Bipolar Transistors - Pre-Biased
PBRN123YT,215  Semiconductors

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See Product Specifications
Part No. PBRN123YT,215
Manufacturer: Nexperia
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased BISS RETS TAPE-7
Datasheet: PBRN123YT,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3062 ea
Line Total: USD 0.31 
Availability - 5373
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19982
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 1969
Multiples : 1
1969 : USD 0.0766
6000 : USD 0.0661
9000 : USD 0.0624
15000 : USD 0.0581
21000 : USD 0.0556
30000 : USD 0.0531
75000 : USD 0.0515

1503
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 5
Multiples : 5
5 : USD 0.1598
50 : USD 0.1269
150 : USD 0.1102
500 : USD 0.0755
3000 : USD 0.0679
6000 : USD 0.0641

5373
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 0.3062
10 : USD 0.1837
100 : USD 0.1104
500 : USD 0.0748
1000 : USD 0.066
3000 : USD 0.0528
6000 : USD 0.0484
9000 : USD 0.0429
24000 : USD 0.0396

8730
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 9000
Multiples : 9000
9000 : USD 0.0534
15000 : USD 0.0529
21000 : USD 0.0459

305550
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 10274
Multiples : 1
10274 : USD 0.0456

16498
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 923
Multiples : 1
923 : USD 0.0711
1000 : USD 0.0686
2000 : USD 0.0661
6000 : USD 0.0455
12000 : USD 0.0417

19982
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 1969
Multiples : 1
1969 : USD 0.0766

221160
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 10274
Multiples : 1
10274 : USD 0.0456

   
Manufacturer
Product Category
RoHS - XON
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Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
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We are delighted to provide the PBRN123YT,215 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBRN123YT,215 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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PBRN123Y series NPN 800 mA, 40 V BISS RETs R1 = 2.2 k, R2 = 10 k Rev. 01 27 February 2007 Product data sheet 1. Product prole 1.1 General description 800 mA NPN low V Breakthrough In Small Signal (BISS) Resistor-Equipped CEsat Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package Nexperia JEITA JEDEC PBRN123YK SOT346 SC-59A TO-236 1 PBRN123YS SOT54 SC-43A TO-92 PBRN123YT SOT23 - TO-236AB 1 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features n 800 mA output current capability n Low collector-emitter saturation voltage V CEsat n High current gain h n Reduces component count FE n Built-in bias resistors n Reduces pick and place costs n Simplies circuit design n 10 % resistor ratio tolerance 1.3 Applications n Digital application in automotive and n Switching loads industrial segments n Medium current peripheral driver 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 40 V CEO 1 I output current O PBRN123YK, PBRN123YT - - 600 mA PBRN123YS - - 800 mAPBRN123Y series Nexperia NPN 800 mA, 40 V BISS RETs R1 = 2.2 k, R2 = 10 k Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit I repetitive peak output current ORM PBRN123YK, PBRN123YT t 1 ms 0.33 - - 800 mA p R1 bias resistor 1 (input) 1.54 2.2 2.86 k R2/R1 bias resistor ratio 4.1 4.55 5 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2. Pinning information Table 3. Pinning Pin Description Simplied outline Symbol SOT54 1 input (base) 2 2 output (collector) R1 1 3 GND (emitter) 1 2 R2 3 001aab347 3 006aaa145 SOT54A 1 input (base) 2 2 output (collector) R1 1 3 GND (emitter) 1 2 R2 3 001aab348 3 006aaa145 SOT54 variant 1 input (base) 2 2 output (collector) R1 1 3 GND (emitter) 1 2 R2 3 001aab447 3 006aaa145 SOT23 SOT346 1 input (base) 3 3 2 GND (emitter) R1 1 3 output (collector) R2 12 2 006aaa144 sym007 PBRN123Y SER 1 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 27 February 2007 2 of 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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