X-On Electronics has gained recognition as a prominent supplier of PBSS4120T Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4120T Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4120T Nexperia

Name: PBSS4120T
Brand: Nexperia
SKU: PBSS4120T_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PBSS4120T electronic component of Nexperia

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See Product Specifications

Part No.	PBSS4120T
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, NPN, SOT-23
Datasheet:	PBSS4120T Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

500: USD 0.1254 ea
Line Total: USD 62.7

Availability - 0

MOQ: 500 Multiples: 1
Pack Size: 1

PBSS4120T More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 500 Multiples : 1	500 : USD 0.1254 1500 : USD 0.1191

Specifications

Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity Npn Npn
Packaging Cut Tape Cut Tape
Collector Emitter Voltage V Br Ceo 20 V 20 V
Transition Frequency Ft - -
Power Dissipation Pd 300 mW 300 mW
Dc Collector Current 1 A 1 A
Dc Current Gain Hfe 470 470
Transistor Case Style Sot-23 Sot-23
No Of Pins 3 3
Operating Temperature Max 150 C 150 C
Msl Msl 1 - Unlimited Msl 1 - Unlimited
Svhc No Svhc (15-Jun-2015) No Svhc (15-Jun-2015)
Collector Emitter Saturation Voltage Vce On 110 V 110 V
Continuous Collector Current Ic Max 1 A 1 A
Current Ic Vce Sat 500 A 500 A
Current Ic Continuous A Max 1 A 1 A
Current Ic Hfe 1 mA 1 mA
Full Power Rating Temperature 25c 25c
Gain Bandwidth Ft Min 100Mhz 100Mhz
Gain Bandwidth Ft Typ 100Mhz 100Mhz
Hfe Min 200 200
Operating Temperature Min - 65 C - 65 C
Operating Temperature Range - 65 C to +150 C - 65 C to +150 C
Power Dissipation Ptot Max 480 mW 480 mW
Voltage Vcbo 30 V 30 V

We are delighted to provide the PBSS4120T from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4120T and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4120T 20 V, 1 A NPN low V (BISS) transistor CEsat Product data sheet 2003 Sep 29NXP Semiconductors Product data sheet 20 V, 1 A PBSS4120T NPN low V (BISS) transistor CEsat FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage V CEsat SYMBOL PARAMETER MAX. UNIT High collector current capability I and I C CM V collector-emitter voltage 20 V CEO High efficiency leading to less heat generation I collector current (DC) 1 A C Reduced printed-circuit board requirements I peak collector current 3 A CM Cost effective alternative to MOSFETs in specific R equivalent on-resistance 200 m CEsat applications. PINNING APPLICATIONS PIN DESCRIPTION Power management 1 base DC/DC conversion 2 emitter Supply line switching 3 collector Battery charger LCD backlighting. Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) handbook, halfpage 3 Inductive load drivers (e.g. relays, buzzers and 3 motors). 1 DESCRIPTION 2 NPN BISS transistor in a SOT23 plastic package providing 1 2 ultra low V and R parameters. CEsat CEsat PNP complement: PBSS5120T. Top view MAM255 MARKING (1) TYPE NUMBER MARKING CODE Fig.1 Simplified outline (SOT23) and symbol. PBSS4120T *3B Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PBSS4120T plastic surface mounted package 3 leads SOT23 2003 Sep 29 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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