X-On Electronics has gained recognition as a prominent supplier of PBSS4130T\,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4130T\,215 Bipolar Transistors - BJT are a product manufactured by NXP. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4130T\,215 NXP

$PBSS4130T\,215 electronic component of NXP$

$PBSS4130T\,215 NXP$

$PBSS4130T\,215 Bipolar Transistors - BJT$

$PBSS4130T\,215 Semiconductors$

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Part No.	PBSS4130T\,215
Manufacturer:	NXP
Category:	Bipolar Transistors - BJT
Description:	Bipolar Small Signal NPN 30V 1A LOW SAT
Datasheet:	PBSS4130T\,215 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.4835 ea
Line Total: USD 1.48

Availability - 533
Ship by Mon. 03 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

PBSS4130T\,215 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

533

Ship by Mon. 03 Mar

MOQ : 1
Multiples : 1

1 : USD 1.4835
10 : USD 0.7418
25 : USD 0.6676
100 : USD 0.5563
500 : USD 0.5007

Specifications

Manufacturer

NXP NXP

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Mounting Style

Smd/Smt Smd/Smt

Package / Case

TO - 236AB TO - 236AB

Transistor Polarity

Npn Npn

Configuration

Single Single

Maximum DC Collector Current

1 A 1 A

Collector- Emitter Voltage VCEO Max

30 V 30 V

Collector- Base Voltage VCBO

40 V 40 V

Emitter- Base Voltage VEBO

5 V 5 V

Pd - Power Dissipation

480 mW 480 mW

Gain Bandwidth Product fT

100 Mhz 100 Mhz

Minimum Operating Temperature

- 65 C - 65 C

Maximum Operating Temperature

+ 150 C + 150 C

Packaging

Reel Reel

Dc Current Gain Hfe Max

300 @ 1 a @ 2 v 300 @ 1 a @ 2 v

Brand

Nxp Semiconductors Nxp Semiconductors

Dc Collector/Base Gain Hfe Min

300 At 1 A At 2 V, 300 At 500 Ma At 2 V, 350 At 100 Ma At 2 V 300 At 1 A At 2 V, 300 At 500 Ma At 2 V, 350 At 100 Ma At 2 V

Factory Pack Quantity :

3000 3000

Notes:- Show Stocked Products With Similar Attributes.

PBSS4130T\,215 Alternative Parts

We are delighted to provide the PBSS4130T\,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4130T\,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4130T 30 V, 1 A NPN low V (BISS) transistor CEsat Product specication 2003 Nov 27Philips Semiconductors Product specication 30 V, 1 A PBSS4130T NPN low V (BISS) transistor CEsat FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage V CEsat SYMBOL PARAMETER MAX. UNIT High collector current capability I and I C CM V collector-emitter voltage 30 V CEO High efficiency leading to less heat generation I collector current (DC) 1 A C Reduced printed-circuit board requirements I peak collector current 3 A CM Cost effective alternative to MOSFETs in specific R equivalent on-resistance 220 m CEsat applications. PINNING APPLICATIONS PIN DESCRIPTION Power management 1 base DC/DC conversion 2 emitter Supply line switching 3 collector Battery charger LCD backlighting. Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) handbook, halfpage 3 Inductive load drivers (e.g. relays, buzzers and 3 motors). 1 DESCRIPTION 2 NPN BISS transistor in a SOT23 plastic package providing 1 2 ultra low V and R parameters. CEsat CEsat Top view MAM255 PNP complement: PBSS5130T. MARKING (1) TYPE NUMBER MARKING CODE Fig.1 Simplified outline (SOT23) and symbol. PBSS4130T *3C Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PBSS4130T - plastic surface mounted package 3 leads SOT23 2003 Nov 27 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
533 Ship by Mon. 03 Mar MOQ : 1 Multiples : 1	1 : USD 1.4835 10 : USD 0.7418 25 : USD 0.6676 100 : USD 0.5563 500 : USD 0.5007

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