X-On Electronics has gained recognition as a prominent supplier of PBSS4230QA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4230QA Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4230QA Nexperia

Name: PBSS4230QA
Brand: Nexperia
SKU: PBSS4230QA_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PBSS4230QA electronic component of Nexperia

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See Product Specifications

Part No.	PBSS4230QA
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, AEC-Q101, NPN, 30V, DFN1010D
Datasheet:	PBSS4230QA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

100: USD 0.2776 ea
Line Total: USD 27.76

Availability - 0

MOQ: 100 Multiples: 1
Pack Size: 1

PBSS4230QA More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 5000 Multiples : 5000	5000 : USD 0.1326 10000 : USD 0.116 25000 : USD 0.1086 50000 : USD 0.0973 125000 : USD 0.0967

0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 100 Multiples : 1	100 : USD 0.2776 500 : USD 0.229 1000 : USD 0.1898 5000 : USD 0.1185

Specifications

Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity NPN NPN
Brand Nexperia Nexperia
Collector Emitter Voltage Vbrceo 30 V 30 V
Transition Frequency Ft 190Mhz 190Mhz
Power Dissipation Pd 325 mW 325 mW
Dc Collector Current 2 A 2 A
Dc Current Gain Hfe 100hFE 100hFE
Transistor Case Style DFN1010D DFN1010D
No. Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (15-Jan-2018) No SVHC (15-Jan-2018)

We are delighted to provide the PBSS4230QA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4230QA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

PBSS4230QA 30 V, 2 A NPN low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description NPN low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5230QA. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 30 V CEO voltage I collector current - - 2 A C I peak collector current single pulse t 1 ms - - 3 A CM p R collector-emitter I = 1 A I = 100 mA pulsed - 135 180 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product DFN1010D-3NXP Semiconductors PBSS4230QA 30 V, 2 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 2 E emitter B 3 C collector 4 3 E 4 C collector sym123 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4230QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals 7. Marking Table 4. Marking codes Type number Marking code PBSS4230QA 01 11 00 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PBSS4230QA All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 23 August 2013 2 / 17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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