X-On Electronics has gained recognition as a prominent supplier of PBSS5260QA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5260QA Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5260QA Nexperia

Name: PBSS5260QA
Brand: Nexperia
SKU: PBSS5260QA_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PBSS5260QA electronic component of Nexperia

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See Product Specifications

Part No.	PBSS5260QA
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, AECQ101, PNP, -60V, DFN1010D
Datasheet:	PBSS5260QA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5005 ea
Line Total: USD 0.5

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

PBSS5260QA More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 1 Multiples : 1	1 : USD 0.5005 10 : USD 0.3743 100 : USD 0.233 500 : USD 0.1594 1000 : USD 0.1226

0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 100 Multiples : 1	100 : USD 0.3121 500 : USD 0.2057 1000 : USD 0.1582 2000 : USD 0.1424

Specifications

Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity PNP PNP
Brand Nexperia Nexperia
Collector Emitter Voltage Vbrceo - 60 V - 60 V
Transition Frequency Ft 150Mhz 150Mhz
Power Dissipation Pd 325 mW 325 mW
Dc Collector Current - 1.7 A - 1.7 A
Dc Current Gain Hfe 30hFE 30hFE
Transistor Case Style DFN1010D DFN1010D
No. Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Automotive Qualification Standard AEC-Q101 AEC-Q101
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (15-Jan-2018) No SVHC (15-Jan-2018)

We are delighted to provide the PBSS5260QA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5260QA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

PBSS5260QA 60 V, 1.7 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4260QA. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -60 V CEO voltage I collector current - - -1.7 A C I peak collector current t 1 ms pulsed - - -2.5 A CM p R collector-emitter I = -1 A I = -100 mA pulsed - 195 280 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product DFN1010D-3NXP Semiconductors PBSS5260QA 60 V, 1.7 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 2 E emitter B 3 C collector 4 3 E sym132 4 C collector 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5260QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals 7. Marking Table 4. Marking codes Type number Marking code PBSS5260QA 10 00 10 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PBSS5260QA All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 28 August 2013 2 / 17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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