X-On Electronics has gained recognition as a prominent supplier of PBSS5330X,135 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5330X,135 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5330X,135 Nexperia

Name: PBSS5330X,135
Brand: Nexperia
SKU: PBSS5330X135_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PBSS5330X,135 electronic component of Nexperia

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Part No.	PBSS5330X,135
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	Trans GP BJT PNP 30V 3A 4-Pin(3+Tab) SOT-89 T/R
Datasheet:	PBSS5330X,135 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

4000: USD 0.1096 ea
Line Total: USD 438.4

Availability - 0

MOQ: 4000 Multiples: 4000
Pack Size: 4000

PBSS5330X,135 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 30 Jan to Wed. 05 Feb MOQ : 4000 Multiples : 4000	4000 : USD 0.1096

We are delighted to provide the PBSS5330X,135 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5330X,135 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low V (BISS) transistor CEsat Product specication 2004 Nov 03 Supersedes data of 2003 Nov 28Philips Semiconductors Product specication 30 V, 3 A PBSS5330X PNP low V (BISS) transistor CEsat FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage V CEsat V collector-emitter voltage - 30 V CEO High collector current capability: I and I C CM I collector current (DC) -3A C Higher efficiency leading to less heat generation I peak collector current -5A CM Reduced printed-circuit board requirements. R equivalent on-resistance 107 m CEsat APPLICATIONS PINNING Power management PIN DESCRIPTION DC/DC converters 1 emitter Supply line switching 2 collector Battery charger 3 base LCD backlighting. Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers 2 and motors). 3 DESCRIPTION 1 PNP low V transistor in a SOT89 plastic package. sym079 CEsat 321 MARKING (1) TYPE NUMBER MARKING CODE Fig.1 Simplified outline (SOT89) and symbol. PBSS5330X *1S Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PBSS5330X SC-62 plastic surface mounted package; collector pad for good heat SOT89 transfer; 3 leads 2004 Nov 03 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS - XON Y Y
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 243 - 3 TO - 243 - 3
Transistor Polarity Pnp Pnp
Configuration Single Single
Maximum DC Collector Current - 5 A - 5 A
Collector- Emitter Voltage VCEO Max - 30 V - 30 V
Collector- Base Voltage VCBO 30 V 30 V
Emitter- Base Voltage VEBO - 6 V - 6 V
Pd - Power Dissipation 550 mW 550 mW
Gain Bandwidth Product fT 100 Mhz 100 Mhz
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Qualification Aec - Q101 Aec - Q101
Packaging Reel Reel
Dc Current Gain Hfe Max 200 @ 100 mA , 2 v 200 @ 100 mA , 2 v
Height 1.6 mm 1.6 mm
Length 4.6 mm 4.6 mm
Width 2.6 mm 2.6 mm
Brand Nexperia Nexperia
Continuous Collector Current - 3 A - 3 A
Dc Collector/Base Gain Hfe Min 200 200
Product Type Bjts - Bipolar Transistors Bjts - Bipolar Transistors
Factory Pack Quantity : 4000 4000
Subcategory Transistors Transistors