X-On Electronics has gained recognition as a prominent supplier of PDTB123YT,215 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. PDTB123YT,215 Bipolar Transistors - Pre-Biased are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

PDTB123YT,215 Nexperia

PDTB123YT,215 electronic component of Nexperia
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See Product Specifications
Part No.PDTB123YT,215
Manufacturer: Nexperia
Category: Bipolar Transistors - Pre-Biased
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 250mW; SOT23; R1: 2.2kO
Datasheet: PDTB123YT,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0286 ea
Line Total: USD 85.8 
Availability - 2910
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
28034
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 10
Multiples : 10
10 : USD 0.051
100 : USD 0.0418
300 : USD 0.0372
3000 : USD 0.0335
6000 : USD 0.0306
9000 : USD 0.0293

81646
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1397
10 : USD 0.0803
100 : USD 0.0451
1000 : USD 0.0341
3000 : USD 0.0275
9000 : USD 0.0264

2238
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.252
5 : USD 0.21
10 : USD 0.1806
50 : USD 0.1148
100 : USD 0.0938

2910
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0286
9000 : USD 0.0243

23280
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 24000
Multiples : 24000
24000 : USD 0.0505

29100
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0251

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PDTB123YT,215 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PDTB123YT,215 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor R1 = 2.2 k, R2 = 10 k 16 November 2020 Product data sheet 1. General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT. 2. Features and benefits 500 mA output current capability Reduces pick and place costs Built-in bias resistors 10 % resistor ratio tolerance Simplifies circuit design Reduces component count AEC-Q101 qualified 3. Applications Digital application in automotive and industrial segments Cost-saving alternative for BC807 series in digital applications Control of IC inputs Switching loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -50 V CEO voltage I output current - - -500 mA O R1 bias resistor 1 T = 25 C 1.54 2.2 2.86 k amb R2/R1 bias resistor ratio 4.1 4.55 5 Nexperia PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor R1 = 2.2 k, R2 = 10 k 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 I input (base) O R1 2 GND ground (emitter) I 3 O output (collector) R2 GND 1 2 aaa-019606 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PDTB123YT SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 %7Y PDTB123YT 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -50 V CBO V collector-emitter voltage open base - -50 V CEO V emitter-base voltage open collector - -5 V EBO V input voltage positive - 5 V I negative - -20 V I output current - -500 mA O P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PDTB123YT All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 16 November 2020 2 / 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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