X-On Electronics has gained recognition as a prominent supplier of PDTB123YT,215 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. PDTB123YT,215 Bipolar Transistors - Pre-Biased are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

PDTB123YT,215 Nexperia

PDTB123YT,215 electronic component of Nexperia
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Part No.PDTB123YT,215
Manufacturer: Nexperia
Category: Bipolar Transistors - Pre-Biased
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 250mW; SOT23; R1: 2.2kO
Datasheet: PDTB123YT,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0406 ea
Line Total: USD 0.41 
Availability - 23113
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
23113
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0406
100 : USD 0.0332
300 : USD 0.0295
3000 : USD 0.0265
6000 : USD 0.0243
9000 : USD 0.0231

78731
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1534
10 : USD 0.0778
100 : USD 0.0437
1000 : USD 0.033
3000 : USD 0.0267
9000 : USD 0.0256

2238
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.244
5 : USD 0.2006
10 : USD 0.1735
50 : USD 0.1111
100 : USD 0.0895

710040
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 15152
Multiples : 1
15152 : USD 0.0312

989400
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 15152
Multiples : 1
15152 : USD 0.0312

2910
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0277
9000 : USD 0.0244

23280
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 24000
Multiples : 24000
24000 : USD 0.0301
30000 : USD 0.0254

29100
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 6000
Multiples : 3000
6000 : USD 0.0302

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PDTB123YT,215 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PDTB123YT,215 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor R1 = 2.2 k, R2 = 10 k 16 November 2020 Product data sheet 1. General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT. 2. Features and benefits 500 mA output current capability Reduces pick and place costs Built-in bias resistors 10 % resistor ratio tolerance Simplifies circuit design Reduces component count AEC-Q101 qualified 3. Applications Digital application in automotive and industrial segments Cost-saving alternative for BC807 series in digital applications Control of IC inputs Switching loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -50 V CEO voltage I output current - - -500 mA O R1 bias resistor 1 T = 25 C 1.54 2.2 2.86 k amb R2/R1 bias resistor ratio 4.1 4.55 5 Nexperia PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor R1 = 2.2 k, R2 = 10 k 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 I input (base) O R1 2 GND ground (emitter) I 3 O output (collector) R2 GND 1 2 aaa-019606 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PDTB123YT SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 %7Y PDTB123YT 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -50 V CBO V collector-emitter voltage open base - -50 V CEO V emitter-base voltage open collector - -5 V EBO V input voltage positive - 5 V I negative - -20 V I output current - -500 mA O P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PDTB123YT All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 16 November 2020 2 / 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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