PESD36VS1UJ Nexperia

PESD36VS1UJ Unidirectional ESD protection diode 16 September 2015 Product data sheet 1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode in a flat lead very small SOD323F Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits ESD protection of one line ESD protection up to 30 kV IEC 61000-4-5 (surge) I = 2.5 A PPM Rated peak pulse power: P = 150 W PPM Ultra low leakage current: I < 1 nA RM AEC-Q101 qualified 3. Applications computers and peripherals audio and video equipment cellular handsets and accessories portable electronics communication systems 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff T = 25 C - - 36 V RWM amb voltage C diode capacitance f = 1 MHz V = 0 V T = 25 C - 18 30 pF d R amb Scan or click this QR code to view the latest information for this product SOD323FNXP Semiconductors PESD36VS1UJ Unidirectional ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 1 2 1 2 2 A anode sym035 SOD323F 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD36VS1UJ SOD323F plastic surface-mounted package 2 leads SOD323F 7. Marking Table 4. Marking codes Type number Marking code PESD36VS1UJ BG 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit P peak pulse power t = 8/20 s 1 2 - 150 W PPM p I peak pulse current 1 2 - 2.5 A PPM T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge voltage IEC 61000-4-2 contact discharge 2 3 - 30 kV ESD IEC 61000-4-2 air discharge 2 - 30 kV 1 Device stressed with ten non-repetitive ESD pulses (8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321). 2 Measured from pin 1 to pin 2. 3 Device stressed with ten non-repetitive ESD pulses. PESD36VS1UJ All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 16 September 2015 2 / 11