PESD36VS2UT Nexperia

PESD36VS2UT Low capacitance unidirectional double ESD protection diode Rev. 01 16 July 2009 Product data sheet 1. Product prole 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 1.2 Features n Unidirectional ESD protection of n ESD protection up to 30 kV two lines n Low diode capacitance: C =17pF n IEC 61000-4-2 level 4 (ESD) d n Max. peak pulse power: P = 160 W n IEC 61000-4-5 (surge) I = 2.5 A PP PP n Low clamping voltage: V =55V n AEC-Q101 qualied CL n Ultra low leakage current: I 1 A RM 1.3 Applications n Computers and peripherals n Portable electronics n Audio and video equipment n Communication systems n Cellular handsets and accessories n 10/100 Mbit/s Ethernet n Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specied. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage - - 36 V RWM C diode capacitance f = 1 MHz V=0V - 1735pF d RPESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 cathode (diode 1) 3 3 2 cathode (diode 2) 3 common anode 12 12 006aaa154 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD36VS2UT - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PESD36VS2UT LF* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode 1 2 P peak pulse power t = 8/20 s - 160 W PP p 1 2 I peak pulse current t = 8/20 s - 2.5 A PP p Per device T junction temperature - 150 C j T ambient temperature - 55 +150 C amb T storage temperature - 65 +150 C stg 1 Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. 2 Measured from pin 1 or 2 to pin 3. PESD36VS2UT 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 16 July 2009 2 of 12