PESD5V0V2BM Nexperia

PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes 14 August 2015 Product data sheet 1. General description Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect two signal lines from damage caused by ESD and other transients. The device is housed in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Bidirectional ESD protection of two lines Ultra small SMD plastic package ESD protection up to 30 kV IEC 61000-4-2 I = 9 A IEC 61000-4-5 (surge) PPM Ultra low leakage current: I = 1 nA RM AEC-Q101 qualified 3. Applications Computers and peripherals Audio and video equipment Cellular handsets and accessories Communication systems Portable electronics 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff T = 25 C - - 5 V RWM amb voltage C diode capacitance f = 1 MHz V = 0 V T = 25 C - 18 20 pF d R amb Scan or click this QR code to view the latest information for this product SOT883NXP Semiconductors PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode 1 1 3 3 2 K2 cathode 2 2 Transparent 3 K3 common cathode top view 006aab331 DFN1006-3 (SOT883) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0V2BM DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 SOT883 solder lands 7. Marking Table 4. Marking codes Type number Marking code PESD5V0V2BM M2 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit I rated peak pulse current t = 8/20 s 1 2 - 9 A PPM p T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge voltage IEC 61000-4-2 contact discharge 1 3 - 30 kV ESD IEC 61000-4-2 air discharge 1 3 - 30 kV MIL-STD-883 human body model 1 - 10 kV 1 Measured from pin 1 or 2 to pin 3. 2 According to IEC 61000-4-5 and IEC 61643-321. 3 Device stressed with ten non-repetitive ESD pulses. PESD5V0V2BM All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 14 August 2015 2 / 12