PESD5V0X1BCAL Nexperia

PESD5V0X1BCAL Extremely low capacitance bidirectional ESD protection diode Rev. 1 1 February 2012 Product data sheet 1. Product profile 1.1 General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection. 1.2 Features and benefits Bidirectional ESD protection of one line ESD protection up to 15 kV Extremely low capacitance: IEC 61000-4-2 level 4 (ESD) C =0.85pF d Low clamping voltage: V =17V AEC-Q101 qualified CL Ultra low leakage current: I =1nA RM 1.3 Applications Computers and peripherals Communication systems Audio and video equipment Portable electronics Cellular handsets and accessories SIM card protection 10/100/1000 Mbit/s Ethernet USB, High-Definition Multimedia Interface (HDMI), FireWire 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per device V reverse standoff voltage - - 5.5 V RWM C diode capacitance f = 1 MHz V = 0 V - 0.85 0.95 pF d RPESD5V0X1BCAL NXP Semiconductors Extremely low capacitance bidirectional ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode (diode 1) 2 cathode (diode 2) 1 2 1 2 sym045 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0X1BCAL - leadless ultra small plastic package 2 terminals SOD882 body 1.0 0.6 0.5 mm 4. Marking Table 4. Marking codes Type number Marking code PESD5V0X1BCAL NN 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device 1 I rated peak pulse current t =8/20 s -1.8 A PPM p T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg 1 Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321). PESD5V0X1BCAL All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 1 February 2012 2 of 12