PIMN31 Nexperia

PIMN31 500 mA, 50 V NPN/NPN double resistor-equipped transistor R1 = 1 k, R2 = 10 k Rev. 01 19 June 2007 Product data sheet 1. Product prole 1.1 General description 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features n 500 mA output current capability n Built-in bias resistors n Simplies circuit design n Reduces component count n Reduces pick and place costs n AEC-Q101 qualied 1.3 Applications n Digital application in automotive and industrial segments n Switching loads 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 50 V CEO I output current - - 500 mA O R1 bias resistor 1 (input) 0.7 1 1.3 k R2/R1 bias resistor ratio 9 10 11PIMN31 NXP Semiconductors 500 mA, 50 V NPN/NPN double RET R1 = 1 k, R2 = 10 k 2. Pinning information Table 2. Pinning Pin Description Simplied outline Symbol 1 GND (emitter) TR1 6 5 4 65 4 2 input (base) TR1 3 output (collector) TR2 R1 R2 4 GND (emitter) TR2 132 TR2 5 input (base) TR2 TR1 6 output (collector) TR1 R2 R1 1 23 sym063 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PIMN31 SC-74 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PIMN31 4E 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 5 V EBO V input voltage I positive - +12 V negative - -5V I output current - 500 mA O 1 P total power dissipation T 25 C - 290 mW tot amb PIMN31 1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 19 June 2007 2 of 11