PMBT3904VS Nexperia

PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 8 July 2009 Product data sheet 1. Product prole 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and at lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP JEITA PMBT3904VS SOT666 - PMBT3906VS PMBT3946VPN 1.2 Features n Double general-purpose switching transistor n Board-space reduction n Ultra small and at lead SMD plastic package 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 40 V CEO I collector current - - 200 mA C h DC current gain V =1V 100 180 300 FE CE I =10mA CPMBT3904VS NXP Semiconductors 40 V, 200 mA NPN/NPN switching transistor 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 5 base TR2 12 3 1 2 3 6 collector TR1 sym020 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PMBT3904VS - plastic surface-mounted package 6 leads SOT666 4. Marking Table 5. Marking codes Type number Marking code PMBT3904VS ZC 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 200 mA C I peak collector current single pulse - 200 mA CM t 1ms p I peak base current single pulse - 100 mA BM t 1ms p 1 2 P total power dissipation T 25 C - 240 mW tot amb Per device 1 2 P total power dissipation T 25 C - 360 mW tot amb PMBT3904VS 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 8 July 2009 2 of 11