PMBT3946VPN Nexperia

PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor Rev. 01 31 August 2009 Product data sheet 1. Product prole 1.1 General description NPN/PNP double switching transistor in a SOT666 ultra small and at lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP JEITA PMBT3946VPN SOT666 - PMBT3904VS PMBT3906VS 1.2 Features n Double general-purpose switching transistor n Board-space reduction n Ultra small and at lead SMD plastic package 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter voltage open base - - 40 V CEO I collector current - - 200 mA C TR1 (NPN) h DC current gain V =1V 100 180 300 FE CE I =10mA C TR2 (PNP) h DC current gain V = - 1V 100 180 300 FE CE I = - 10 mA CPMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 5 base TR2 12 3 1 2 3 6 collector TR1 sym019 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PMBT3946VPN - plastic surface-mounted package 6 leads SOT666 4. Marking Table 5. Marking codes Type number Marking code PMBT3946VPN ZE 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1 (NPN) V collector-base voltage open emitter - 60 V CBO TR2 (PNP) V collector-base voltage open emitter - - 40 V CBO Per transistor for the PNP transistor with negative polarity V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 200 mA C I peak collector current single pulse - 200 mA CM t 1ms p I peak base current single pulse - 100 mA BM t 1ms p 1 2 P total power dissipation T 25 C - 240 mW tot amb PMBT3946VPN 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 31 August 2009 2 of 15