X-On Electronics has gained recognition as a prominent supplier of PMBT3946YPN,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMBT3946YPN,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMBT3946YPN,115 Nexperia

PMBT3946YPN,115 electronic component of Nexperia
PMBT3946YPN,115 Nexperia
PMBT3946YPN,115 Bipolar Transistors - BJT
PMBT3946YPN,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMBT3946YPN,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR
Datasheet: PMBT3946YPN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2325 ea
Line Total: USD 0.23 
Availability - 991
Ship by Tue. 06 May to Thu. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
237
Ship by Thu. 15 May to Tue. 20 May
MOQ : 5
Multiples : 5
5 : USD 0.1534
50 : USD 0.1228
150 : USD 0.1076
500 : USD 0.065
3000 : USD 0.0587
6000 : USD 0.0556

991
Ship by Tue. 06 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 0.2325
10 : USD 0.1425
100 : USD 0.0852
500 : USD 0.0598
1000 : USD 0.0418
3000 : USD 0.0418

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMBT3946YPN,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBT3946YPN,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMBT3946YPN 40 V, 200 mA NPN/PNP general-purpose double transistor Rev. 01 12 May 2009 Product data sheet 1. Product prole 1.1 General description NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Package complement complement conguration NXP JEITA PMBT3946YPN SOT363 SC-88 PMBT3904YS PMBT3906YS very small 1.2 Features n General-purpose double transistor n Board-space reduction 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter voltage open base - - 40 V CEO I collector current - - 200 mA C h DC current gain V =1V 100 180 300 FE CE I =10mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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