PMBTA06 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET PMBTA06 NPN general purpose transistor Product data sheet 2004 Jan 22 Supersedes data of 1999 Apr 29NXP Semiconductors Product data sheet NPN general purpose transistor PMBTA06 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification in e.g. telephony and professional communication equipment. DESCRIPTION handbook, halfpage 3 NPN transistor in a SOT23 plastic package. 3 PNP complement: PMBTA56. 1 MARKING (1) 2 TYPE NUMBER MARKING CODE 1 2 PMBTA06 *1G Top view MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMBTA06 plastic surface mounted package 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 80 V CBO V collector-emitter voltage open base 80 V CEO V emitter-base voltage open collector 4 V EBO I collector current (DC) 500 mA C I peak collector current 1 A CM I peak base current 200 mA BM P total power dissipation T 25 C note 1 250 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 22 2