X-On Electronics has gained recognition as a prominent supplier of PMBTA42 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMBTA42 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMBTA42 Nexperia

Name: PMBTA42
Brand: Nexperia
SKU: PMBTA42_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PMBTA42 electronic component of Nexperia

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See Product Specifications

Part No.	PMBTA42
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, BJT, NPN, 300V, 0.1A, SOT-23
Datasheet:	PMBTA42 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

500: USD 0.0519 ea
Line Total: USD 25.95

Availability - 0

MOQ: 500 Multiples: 1
Pack Size: 1

PMBTA42 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 25 Dec to Tue. 31 Dec MOQ : 500 Multiples : 1	500 : USD 0.0519 1500 : USD 0.0491

Specifications

Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity Npn Npn
Packaging Cut Tape Cut Tape
Collector Emitter Voltage Vbrceo 300 V 300 V
Transition Frequency Ft - -
Power Dissipation Pd 250 mW 250 mW
Dc Collector Current 100 mA 100 mA
Dc Current Gain Hfe 40 40
Transistor Case Style Sot-23 Sot-23
No Of Pins 3 3
Operating Temperature Max 150 C 150 C
Msl Msl 1 - Unlimited Msl 1 - Unlimited
Svhc No Svhc (15-Jun-2015) No Svhc (15-Jun-2015)
Collector Emitter Saturation Voltage Vceon 500 mV 500 mV
Current Ic Vce Sat 20 A 20 A
Current Ic Continuous A Max 100 mA 100 mA
Current Ic Hfe 10 mA 10 mA
Gain Bandwidth Ft Typ 50Mhz 50Mhz
Hfe Min 40 40
Operating Temperature Min - 65 C - 65 C
Operating Temperature Range - 65 C to +150 C - 65 C to +150 C
Peak Current Icm 0.2 A 0.2 A
Power Dissipation Ptot Max 250 mW 250 mW
Smd Marking 1D 1D
Termination Type Smd Smd

We are delighted to provide the PMBTA42 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBTA42 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92. 1.2 Features High voltage (max. 300 V) 1.3 Applications Telephony and professional communication equipment 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 300 V CEO I collector current - - 100 mA C h DC current gain V =10V FE CE I =1mA 25 - - C I =10mA 40 - - C I =30mA 40 - - C 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3collector 1 12 2 sym021 PMBTA42 NXP Semiconductors 300 V, 100 mA NPN high-voltage transistor 3. Ordering information Table 3. Ordering information 1 Type number Package Name Description Version PMBTA42 - plastic surface-mounted package 3 leads SOT23 PMBTA42/DG 1 /DG: halogen-free 4. Marking Table 4. Marking codes 1 2 Type number Marking code PMBTA42 *1D PMBTA42/DG *BV 1 /DG: halogen-free 2 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 300 V CBO V collector-emitter voltage open base - 300 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 100 mA C I peak collector current single pulse -200 mA CM t 1ms p I peak base current single pulse -100 mA BM t 1ms p 1 P total power dissipation T 25 C -250 mW tot amb T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMBTA42 5 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 12 December 2008 2 of 9

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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