PMBTA44/HV,215 NXP

PMBTA44 400 V, 0.3 A NPN high-voltage low V (BISS) transistor CEsat Rev. 01 22 February 2008 Product data sheet 1. Product prole 1.1 General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a CEsat SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features n Low current (max. 300 mA) n High voltage (max. 400 V) n AEC-Q101 qualied 1.3 Applications n LED driver for LED chain module n LCD backlighting n High Intensity Discharge (HID) front lighting n Automotive motor management n Hook switch for wired telecom n Switch mode power supply 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 400 V CEO I collector current - - 300 mA C h DC current gain V =10V I =10mA 50 - 200 FE CE CPMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplied outline Symbol 1 base 3 3 2 emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBTA44 - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMBTA44 W3* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMBTA44 1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 22 February 2008 2 of 12