PMBTA45 Nexperia

PMBTA45 500 V, 150 mA NPN high-voltage low V (BISS) transistor CEsat Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a CEsat SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9050T. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C AEC-Q101 qualified 1.3 Applications Electronic ballasts LED driver for LED chain module LCD backlighting Automotive motor management Flyback converters Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter peak V = 0 V - - 500 V CESM BE voltage V collector-emitter voltage open base - - 500 V CEO I collector current - - 0.15 A C h DC current gain V =10V I = 30 mA 50 100 - FE CE CPMBTA45 NXP Semiconductors 500 V, 150 mA NPN high-voltage low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBTA45 - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMBTA45 LK* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMBTA45 2 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 10 March 2010 2 of 13